BD436_15 Datasheet, PDF (1/1 Pages) SeCoS Halbleitertechnologie GmbH – PNP General Purpose Transistor

Elektronische Bauelemente
BD436
PNP General Purpose Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead free
FEATURES
High Current
Amplifier and Switching Applications
TO-126
1Emitter
2Collector
3Base
A
E
F
B
C
N
L
H
M
K
D
J
G
REF.
A
B
C
D
E
F
G
Millimeter
Min. Max.
7.40 7.80
2.50 2.90
10.60 11.00
15.30 15.70
3.70 3.90
3.90 4.10
2.29 TYP.
REF.
H
J
K
L
M
N
Millimeter
Min. Max.
1.10 1.50
0.45 0.60
0.66 0.86
2.10 2.30
1.17 1.37
3.00 3.20
ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise specified)
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Maximum Junction to Ambient
Junction, Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
TJ, TSTG
Ratings
-32
-32
-5
-4
1.25
100
150, -55 ~ 150
Unit
V
V
V
A
W
°C / W
°C
ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise specified)
Parameter
Collector - Base Breakdown Voltage
Collector-emitter sustaining voltage ¹
Emitter - Base Breakdown Voltage
Collector Cut - Off Current
Emitter Cut-Off Current
DC Current Gain ¹
Symbol
V(BR)CBO
VCEO(SUS)
V(BR)EBO
ICBO
IEBO
hFE
Min.
-32
-32
-5
-
-
40
85
Typ.
-
-
-
-
-
-
-
Max.
-
-
-
-100
-1
-
375
Unit
V
V
V
µA
mA
50
Collector - Emitter Saturation Voltage ¹ VCE(sat)
-
Base – Emitter Voltage ¹
VBE
-
Transition frequency
Note:
1. Pulse test
fT
3
-
-
-
-0.5
V
-
-1
V
-
-
MHz
Test Conditions
IC= -0.1mA, IE=0
IC= -100mA, IB=0
IC=0, IE= -0.1mA
VCB= -32V, IE= 0
VEB= -5V, IC= 0
VCE= -5V, IC= -10mA
VCE= -1V, IC= -500mA
VCE= -1V, IC= -2A
IC= -2A, IB = -0.2A
VCE= -1V, IC= -2A
VCE= -1V, IC= -250mA
http://www.SeCoSGmbH.com/
26-Nov-2013 Rev. A
Any changes of specification will not be informed individually.
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