BCX70J_15 Datasheet, PDF (1/3 Pages) SeCoS Halbleitertechnologie GmbH – Plastic-Encapsulate Transistor

Elektronische Bauelemente
BCX70J
NPN Silicon
Plastic-Encapsulate Transistor
FEATURES
 Low Current
 Low Voltage
MARKING : AJ
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
Collector


Base

Emitter
SOT-23
A
L
3
Top View
CB
1
1
2
K
E
D
F
G
H
3
2
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.04
2.10 2.80
1.20 1.60
0.89 1.40
1.78 2.04
0.30 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
-
0.18
0.40 0.60
0.08 0.20
0.6 REF.
0.85 1.15
MAXIMUM RATINGS (at Ta = 25°C unless otherwise specified)
PARAMETER
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissapation
Junction, Storage Temperature
SYMBOL
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J, T_STG
RATINGS
45
45
5
200
250
150, -55~150
UNIT
V
V
V
mA
mW
Ċ
ELECTRICAL CHARACTERISTICS (at Ta = 25°C unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Voltage
Collector Output Capacitance
Noise Figure
Gain-Bandwidth Product
TEST CONDITIONS
I_C=10µA, I_E =0
I_C=2mA, I_B =0
I_E=1µA, I_C =0
V_CE=45V, V_BE =0
V_CE=5V, I_C=10µA
V_CE=5V, I_C=2mA
V_CE=1V, I_C=50mA
I_C =10mA, I_B =0.25mA
I_C =50mA, I_B =1.25mA
I_C=10mA, I_B=-0.25mA
I_C=50mA, I_B=1.25mA
V_CE=5V, I_C=2mA
V_CB=10V, I_E =0, f =1MHz
V_CE=5V,I_C=200µA,f=1KHZ,
BW=200HZ,RS=2KΩ
V_CE =5V, I_C=10mA,f=100MHz
SYMBOL
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CES
h_FE1
h_FE2
h_FE3
V_CE(sat)1
V_CE(sat)2
V_BE(sat)1
V_BE(sat)2
V_BE
C_OB
NF
F_T
MIN.
45
45
5
30
250
90
0.05
0.1
0.6
0.7
0.55
100
TYP.
MAX.
20
UNIT
V
V
V
nA
460
0.35
V
0.55
V
0.85
V
1.05
V
0.75
V
1.7
pF
6
dB
250
MHz
http://www.SeCoSGmbH.com/
26-Oct-2009 Rev. B
Any changes of specification will not be informed individually.
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