BCX56 Datasheet, PDF (1/2 Pages) Weitron Technology – NPN Plastic-Encapsulate Transistor

Elektronische Bauelemente
BCX56
NPN Transistors
Plastic-Encapsulate Transistors
RoHS Compliant Product
Features
1
2
3
1.BASE
2.COLLECTOR
3.EMITTER
Power dissipation
P_CM:
Collector current
1 . 2 W (Tamb=25^oC)
I_CM:
1A
Collector-base voltage
V_(BR)CBO:
100 V
Operating and storage junction temperature range
T_J, T_stg: -65 ^o_C to +150 ^o_C
Complimentary to BCX53
SOT-89
4.4~4.6
1.4~1.8
1.4~1.6
0.36~0.56
1.5Ref.
2.9~3.1
0.32~0.52
0.35~0.44
Dimensision in Millimeter
ELECTRICAL CHARACTERISTICS (Tamb=25 ^oC unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
BCX56
BCX56-10
BCX56-16
Transition frequency
Collector-emitter saturation voltage
Base-emitter voltage
Symbol Test conditions
V(BR)CBO
Ic=100µA, IE=0
V(BR)CEO
IC= 1 mA , IB=0
V(BR)EBO
IE=10µ A, IC=0
ICBO
VCB=30V, IE=0
IEBO
hFE(1)
hFE(2)
hFE(3)
fT
VCE(sat)
VEB=5 V, IC=0
VCE=2V, IC= 5mA
VCE=2V, IC= 150mA
VCE=2V, IC= 500mA
VCE= 5V, IC= 10mA
IC=500 mA, IB= 50mA
VBE(ON)
IC= 500 mA, VCE=2V
MIN
100
80
5
63
63
40
100
MAX UNIT
V
V
V
100
nA
100
nA
250
MHz
500 mV
1
V
Classification of hFE2
Rank
Range
10
63 - 160
16
100 - 250
DEVICE MARKING
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
BCP56
xxxx
Date Code
Any changing of specification will not be informed individual
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