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| BCX54 Datasheet, PDF (1/1 Pages) NXP Semiconductors – NPN medium power transistors | |||
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Elektronische Bauelemente
BCX54
NPN Transistors
Plastic-Encapsulate Transistors
RoHS Compliant Product
Features
1
2
3
1.BASE
2.COLLECTOR
3.EMITTER
SOT-89
4.4~4.6
1.4~1.8
1.4~1.6
Power dissipation
PCM:
0.5
W (Tamb=25oC)
Collector current
ICM:
1A
Collector-base voltage
V(BR)CBO:
45 V
Operating and storage junction temperature range
TJ, Tstg: -55 oC to +150 oC
0.36~0.56
1.5Ref.
2.9~3.1
0.32~0.52
0.35~0.44
Dimensision in Millimeter
ELECTRICAL CHARACTERISTICS (Tamb=25oC unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
Test conditions
Ic=100µA , IE=0
IC= 1mA , IB=0
IE=10µA, IC=0
VCB=30V, IE=0
VEB=5V, IC=0
MIN MAX UNIT
45
V
45
V
5
V
0.1
µA
0.1
µA
DC current gain
BCX54
BCX54-10
BCX54-16
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
hFE (1)
VCE=2V, IC= 150mA
63
250
63
160
100 250
hFE(2)
VCE=2V, IC= 5mA
40
hFE(3)
VCE=2V, IC= 500mA
25
VCE(sat)
IC=500 mA, IB= 50mA
0.5
V
VBE(ON)
IC= 500 mA, VCE=2V
1
V
fT
VCE= 10V, IC= 50mA
130
f = 100MHz
MHz
DEVICE MARKING
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
BCX54=BA BCX54-10=BC BCX54-16=BD
Any changing of specification will not be informed individual
Page 1 of 1
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