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| BCX53_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors | |||
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Elektronische Bauelemente
BCX53
PNP Transistors
Plastic-Encapsulate Transistors
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
Features
1
2
3
1.BASE
2.COLLECTOR
3.EMITTER
Power dissipation
PCM:
Collector current
ICM:
Collector-base voltage
V(BR)CBO:
0.5
-1.0
-100.0
W (Tamb=25oC)
A
V
Operating and storage junction temperature range
TJ Tstg: 150, -65 ~ 150oC
SOT-89
4.4~4.6
1.4~1.8
1.4~1.6
0.36~0.56
1.5Ref.
2.9~3.1
0.32~0.52
0.35~0.44
Dimensision in Millimeter
ELECTRICAL CHARACTERISTICS (Tamb=25 oC unless otherwise specified)
PARAMETER
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
SYMBOL TEST CONDITIONS MIN MAX UNIT
V(BR)CBO
Ic=-100µA , IE=0
-100
V
V(BR)CEO
IC=- 1 mA , IB=0
-80
V
V(BR)EBO
IE=-100 µA, IC=0
-5
V
ICBO
VCB=-30V, IE=0
-0.1
µA
IEBO
VEB=-5V, IC=0
-0.1
µA
DC current gain
hFE(1)
VCE=-2V, IC=- 5 mA
63
hFE(2)
VCE=-2V, IC=- 150 mA
63
250
Collector-emitter saturation voltage
Base-emitter voltage
hFE(3)
VCE=-2V, IC= -500mA
40
VCE(sat) IC=-500 mA, IB=- 50mA
-0.5
V
VBE
IC= -500 mA, VCE=-2V
-1
V
Transition frequency
fT
VCE= -5V, IC=-10mA
50
f = 100MHz
MHz
DEVICE MARKING
http://www.SeCoSGmbH.com
01-Jun-2005 Rev. B
BCX53=AH BCX53-10=AK BCX53-16=AL
Any changing of specification will not be informed individual
Page 1 of 2
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