BCX51 Datasheet, PDF (1/1 Pages) NXP Semiconductors – PNP medium power transistors

Elektronische Bauelemente
BCX51
PNP Transistors
Plastic-Encapsulate Transistors
RoHS Compliant Product
Features
1
2
3
1.BASE
2.COLLECTOR
3.EMITTER
Power dissipation
P_CM:
Collector current
I_CM:
Collector-base voltage
V_(BR)CBO:
0.5
-1
-45
W (Tamb=25^oC)
A
V
Operating and storage junction temperature range
T_J, T_stg: -55^oC to +150^oC
SOT-89
4.4~4.6
1.4~1.8
1.4~1.6
0.36~0.56
1.5Ref.
2.9~3.1
0.32~0.52
0.35~0.44
Dimensision in Millimeter
ELECTRICAL CHARACTERISTICS (Tamb=25 ^oC unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
Test conditions
Ic=-100µA, I_E=0
I_C= -1mA , I_B=0
I_E=-10µA, I_C=0
V_CB=-30V, I_E=0
V_EB=-5V, I_C=0
MIN MAX UNIT
-45
V
-45
V
-5
V
-0.1
µA
-0.1
µA
DC current gain
BCX51
BCX51-10
BCX51-16
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
h_FE(1)
V_CE=-2V, I_C=-150mA
63
63
250
160
100 250
h_FE(2)
V_CE=-2V, I_C=- 5mA
63
h_FE(3)
V_CE=-2V, I_C=- 500mA
40
V_CE(sat) I_C=-500 mA, I_B= -50mA
-0.5
V
V_BE(ON) I_C= -500 mA, V_CE=-2V
-1
V
f_T
V_CE= -5V, I_C=-10mA
50
f = 100MHz
MHz
DEVICE MARKING
BCX51=AA BCX51-10=AC BCX51-16=AD
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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