BCX19 Datasheet, PDF (1/1 Pages) NXP Semiconductors – NPN general purpose transistor

Elektronische Bauelemente
BCX19
NPN Silicon
Plastic-Encapsulate Transistor
A suffix of "-C" specifies halogen & lead-free
FEATURES
n _{Power dissipation}
PCM : 0.225 W (Tamb=25^OC)
n _{Collector Current}
ICM : 0.5 A
n _{Collector-base voltage}
V(BR)CBO : 50 V
n _{Operating & storage junction temperature}
Tj, Tstg : - 55^OC ~ + 150^OC
n _{RoHS Compliant Product}
3
1
2
SOT-23
Collector
3
1
Base
2
Emitter
2. 4
1. 3
Unit: m i l l i m e t e r
ELECTRICAL CHARACTERISTICS(Tamb=25^oC unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IEBO
hFE
VCE(sat)
VBE(on )
Test conditions
Ic= 10µA, IE=0
Ic =10 mA, IB=0
IE=10µA, IC=0
VCB=20V, IE=0
VCE=20V, IB=0
VEB= 5V, IC=0
VCE=1V, IC=100mA
IC=500mA,IB= 50mA
I C=500mA,VCE=1V
MIN
50
45
5
100
TYP
MAX UNIT
V
V
V
0.1
µA
0.1
µA
10
µA
600
0.62
V
1.2
V
MARKING
BCX19 = U1
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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