BCW68 Datasheet, PDF (1/3 Pages) Zetex Semiconductors – PNP SILICON PLANAR MEDIUM POWER TRANSISTOR

Elektronische Bauelemente
BCW68
PNP Plastic-Encapsulate Transistors
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
SOT-23
FEATURES
 Complementary to BCW66.
MARKING:
BCW68F:DF
BCW68G:DG
BCW68H:DH
COLLECTOR
3
1
BASE
2
EMITTER
MAXIMUM RATINGS (T_A = 25°C unless otherwise specified)
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction & Storage Temperature
SYMBOL
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J, T_STG
RATINGS
-60
-45
-5
-0.8
0.33
150, -55~150
A
L
3
Top View
CB
1
1
2
K
E
D
F
G
H
3
2
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.04
2.10 2.80
1.20 1.60
0.89 1.40
1.78 2.04
0.30 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
-
0.18
0.40 0.60
0.08 0.20
0.6 REF.
0.85 1.15
UNIT
V
V
V
A
W
°C
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise specified)
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT
TEST CONDITIONS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Collector Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
Output Capacitance
Input Capacitance
V_(BR)CBO
-60
V_(BR)CEO
-45
V_(BR)EBO
-5
I_CBO
I_EBO
BCW68F
35
h_FE1 BCW68G
50
BCW68H 80
BCW68F
75
h_FE2 BCW68G 120
BCW68H 180
BCW68F 100
h_FE3 BCW68G 160
BCW68H 250
BCW68F
35
h_FE4 BCW68G
60
BCW68H 100
V_CE(sat)
V_BE(sat)
f_T
C_OB
C_IB
-0.02
-0.02
V I_C=-10μA, I_E=0
V I_C=-10mA, I_B=0
V I_E=-10μA, I_C=0
μA V_CB=-45V, I_E=0
μA V_EB=-4V, I_C=0
V_CE=-10V, I_C=-0.1mA
V_CE=-1V, I_C=-10mA
250
400
V_CE=-1V, I_C=-100mA
630
V_CE=-2V, I_C=-500mA
-0.3
V I_C=-100mA, I_B=-10mA
-0.7
V I_C=-500mA, I_B=-50mA
-1.25
V I_C=-100mA, I_B=-10mA
-2
V I_C=-500mA, I_B=-50mA
200
MHz V_CE=-5V, I_C=-50mA,f=20MHz
6
pF V_CB=-10V, I_E=0,f=1MHz
60
pF V_EB=-0.5V,I_E=0,f=1MHz
27-Oct-2009 Rev. A
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