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BCV27 Datasheet, PDF (1/3 Pages) NXP Semiconductors – NPN Darlington transistors
Elektronische Bauelemente
BCV27
40 V, 500mA
NPN Darlington Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
For general AF application high collector current
High current gain
Collector
3
1
Base
2
Emitter
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
PARAMETER
SYMBOL
RATING
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Current - Peak
Collector Power Dissipation
Thermal Resistance, Junction to Ambient Air
Junction, Storage Temperature
VCBO
VCEO
VEBO
IC
ICM
PC
RθJA
TJ, TSTG
40
30
10
500
800
350
357
150, -65~150
SOT-23
A
L
3
Top View
CB
1
1
2
K
E
D
F
G
H
3
2
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.04
2.10 2.80
1.20 1.60
0.89 1.40
1.78 2.04
0.30 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
-
0.18
0.40 0.60
0.08 0.20
0.6 REF.
0.85 1.15
UNIT
V
V
V
mA
mA
mW
°C/W
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
PARAMETER
SYMBOL MIN TYP MAX UNIT
TEST CONDITION
Collector to Base Breakdown Voltage
V(BR)CBO
40
-
-
V IC=100µA, IE = 0A
Collector to Emitter Breakdown Voltage
V(BR)CEO
30
-
-
V IC=10mA, IB = 0A
Emitter to Base Breakdown Voltage
V(BR)EBO
10
-
-
V IE=10µA, IC = 0A
Collector Cut-Off Current
ICBO
-
-
0.1
µA VCB=30 V, IE = 0 A
Emitter Cut-Off Current
IEBO
-
-
0.1
µA VEB=4 V, IC = 0 A
hFE1*
4000
-
-
VCE=1V, IC=100µA
DC Current Gain
hFE2*
10000
-
-
hFE3*
20000
-
-
VCE=5V, IC=10mA
VCE=5V, IC=100mA
hFE4*
4000
-
-
VCE=5V, IC=500mA
Collector to Emitter Saturation Voltage
VCE(sat) *
-
-
1
V IC=100mA, IB=0.1mA
Base to Emitter Saturation Voltage
VBE(sat) *
-
-
1.5
V IC=100mA, IB=0.1mA
Transition Frequency
fT
-
170
-
MHz VCE = 5V, IC =50mA, f=100MHz
Collector Output Capacitance
Cob
*Pulse test: Pulse width ≦300µS; Ducy Cycle ≦2.0%
-
3.5
-
pF VCB = 10V, f=1MHz
http://www.SeCoSGmbH.com/
22-Jan-2010 Rev. A
Any changes of specification will not be informed individually.
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