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BCPA94_15 Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – PNP Plastic Encapsulated Transistor
Elektronische Bauelemente
BCPA94
-0.2A , -400V
PNP Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURE
 Excellent hFE Linearity
PACKAGE INFORMATION
Package
MPQ
SOT-89
1K
Leader Size
7 inch
SOT-89
4
123
A
E
C
B
D
F
G
Collector

H
K
J
L

Base

Emitter
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
4.40 4.60
3.94 4.25
1.40 1.60
2.25 2.60
1.50 1.85
0.89 1.20
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.40 0.58
1.50 TYP
3.00 TYP
0.32 0.52
0.35 0.44
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Ratings
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
VCBO
VCEO
VEBO
IC
PC
TJ, TSTG
-400
-400
-5
-200
500
150, -55~150
Unit
V
V
V
mA
mW
°C
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Collector to Base Breakdown Voltage
V(BR)CBO
-400
-
-
V IC= -100μA, IE=0
Collector to Emitter Breakdown Voltage V(BR)CEO -400
-
-
V IC= -1mA, IB=0
Emitter to Base Breakdown Voltage
V(BR)EBO
-5
-
-
V IE= -100μA, IC=0
Collector Cut-Off Current
ICBO
-
-
-0.1
μA VCB= -400V, IE=0
Collector Cut-Off Current
ICEO
-
-
-5
μA VCE= -400V, IB=0
Emitter Cut-Off Current
IEBO
-
-
-0.1
μA VEB= -4V, IC=0
hFE (1)
80
-
300
VCE= -10V, IC= -10mA
DC Current Gain
hFE (2)
70
-
-
hFE (3)
60
-
-
VCE= -10V, IC= -1mA
VCE= -10V, IC= -100mA
hFE (4)
80
-
-
VCE= -10V, IC= -50mA
Collector to Emitter Saturation Voltage
VCE(sat) (1)
-
VCE(sat) (2)
-
-
-0.2
V IC= -10mA, IB= -1mA
-
-0.3
V IC= -50mA, IB= -5mA
Base to Emitter Saturation Voltage
VBE(sat)
-
-
-0.75
V IC= -10mA, IB= -1mA
Transition Frequency
fT
50
-
-
MHz VCE= -20V, IC= -10mA, f=30MHz
http://www.SeCoSGmbH.com/
03-Nov-2012 Rev. C
Any changes of specification will not be informed individually.
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