BCPA14_15 Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – NPN Silicon

Elektronische Bauelemente
BCPA14
NPN Silicon
Epitaxial Planar Transistor
RoHS Compliant Product
SOT-89
Description
The BCPA14 is a Darlington amplifier transistor designed
for applications requiring exremely high current gain.
Absolute Maximum Ratings at TA=25^oC
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collect Current
Total Power Dissipation
Operating Junction and Storage Temperature Range
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
4.4
4.6
4.05
4.25
1.50
1.70
1.30
1.50
2.40
2.60
0.89
1.20
REF.
G
H
I
J
K
L
M
Millimeter
Min. Max.
3.00 REF.
1.50 REF.
0.40 0.52
1.40 1.60
0.35 0.41
5q TYP.
0.70 REF.
Symbol
VCBO
VCEO
VE BO
IC
PD
Tj, Tstg
Ratings
30
30
10
500
1.0
-55~+150
Unit
V
V
V
mA
W
o_C
ELECTRICAL CHARACTERISTICS (Tamb=25^oC)
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Collector Cut-off Current
Collector Output Capacitance
Collector-Emitter Saturation Voltage
Base-Emitter Voltage, On
DC Current Gain
DC Current Gain
Transition Frequency
Symbol
BV_CBO
BV _CEO
BV_EBO
ICBO
ICEO
Cob
*VCE(sat)
*VBE(on)
*hFE1
*hFE2
fT
*Pulse Test: Pulse Width 380us, Duty Cycle 2%
Min.
30
30
10
-
-
-
-
-
10K
20K
125
Typ.
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
100
100
6
1.5
2.0
-
-
-
Unit
V
V
V
nA
nA
pF
V
V
MHz
Test Conditions
IC=100u A, IE=0
IC= 100u A, IB =0
IE=10uA, IC=0
VCB=30V, IE=0
VEB=10V, IC=0
VCB=10V,f=1MHz,IE=0
IC=100mA, IB =0.1mA
VCE=5V, IC=100mA
VCE=5V, IC=10mA
VCE=5V, IC=100mA
VCE=5V, IC =10mA, f=100MHz
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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