BCP882J Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – 3A , 40V P Plastic-Encapsulate Transistor

Elektronische Bauelemente
BCP882J
3A , 40V
P Plastic-Encapsulate Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Small Flat Package.
High DC Current Gain
Low V_CE(sat)
CLASSIFICATION OF h_FE
Rank
BCP882J-O BCP882J-Y
BCP882J-GR
SOT-89
123
A
E
C
4 ^{1. Base}
2. Collector
3. Emitter
Range
100~200
160~320
200~400
PACKAGE INFORMATION
Package
MPQ
SOT-89
1K
Leader Size
7 inch
1
Base
B
F
G
H
J
D
K
L
Collector
2
3
Emitter
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
4.40 4.60
3.94 4.25
1.40 1.60
2.30 2.60
1.50 1.70
0.89 1.20
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.40 0.58
1.50 TYP
3.00 TYP
0.32 0.52
0.35 0.44
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Rating
Unit
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Continuous Collector Current
Collector Power Dissipation
Thermal Resistance from Junction to Ambient
Junction and Storage Temperature
VCBO
VCEO
VEBO
IC
PC
RθJA
TJ, TSTG
40
30
6
3
500
250
150, -55~150
V
V
V
A
mW
°C / W
°C
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol
Min
Typ
Collector to Base Breakdown Voltage
V(BR)CBO
40
-
Collector to Emitter Breakdown Voltage V(BR)CEO
30
-
Emitter to Base Breakdown Voltage
V(BR)EBO
6
-
Collector Cut-Off Current
ICBO
-
-
Collector Cut-Off current
ICEO
-
-
Emitter Cut-Off Current
IEBO
-
-
DC Current Gain
100
-
hFE
32
Collector to Emitter Saturation Voltage VCE(sat)
-
-
Base to Emitter Saturation Voltage
VBE(sat)
-
-
Transition Frequency
fT
-
50
Max
-
-
-
1
10
1
400
0.5
1.5
-
Unit
Test condition
V IC=100µA, IE=0
V IC=10mA, IB=0
V IE=100µA, IC=0
µA VCB=40V, IE=0
µA VCE=30V, IB=0
µA VEB=6V, IC=0
VCE=2V, IC=1A
VCE=2V, IC=100mA
V IC=2A, IB=0.2A
V IC=2A, IB=0.2A
MHz VCE=5V, IC=0.1A, f=10MHz
http://www.SeCoSGmbH.com/
14-Jul-2016 Rev. A
Any changes of specification will not be informed individually.
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