BCP882H_15 Datasheet, PDF (1/1 Pages) SeCoS Halbleitertechnologie GmbH – NPN Plastic-Encapsulate Transistor

Elektronische Bauelemente
BCP882H
3A , 70 V
NPN Plastic-Encapsulate Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Small Flat Package.
High DC Current Gain
Low V_CE(sat)
SOT-89
4
MARKING
D882H
CLASSIFICATION OF h_FE
Rank BCP882H-R BCP882H-O
Range
60~120
100~200
BCP882H-Y
160~320
BCP882H-GR
200~400
PACKAGE INFORMATION
Package
MPQ
SOT-89
1K
Leader Size
7 inch
A
E
B
F
G
H
J
123
C
D
K
L
1. Base
2. Collector
3. Emitter
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
4.40 4.60
3.94 4.25
1.40 1.60
2.30 2.60
1.50 1.70
0.89 1.20
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.40 0.58
1.50 TYP
3.00 TYP
0.32 0.52
0.35 0.44
Collector
2
ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise specified)
Parameter
Symbol
Rating
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Continuous Collector Current
Collector Power Dissipation
Thermal Resistance Junction to Ambient
Junction, Storage Temperature
VCBO
VCEO
VEBO
IC
PC
RθJA
TJ, TSTG
70
70
6
3
500
250
150, -55~150
1
Base
3
Emitter
Unit
V
V
V
A
mW
°C / W
°C
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise specified)
Parameter
Symbol Min Typ Max Unit
Test condition
Collector to Base Breakdown Voltage
V(BR)CBO
70
-
-
V IC=100µA, IE=0
Collector to Emitter Breakdown Voltage V(BR)CEO
70
-
-
V IC=10mA, IB=0
Emitter to Base Breakdown Voltage
V(BR)EBO
6
-
-
V IE=100µA, IC=0
Collector Cut-Off Current
ICBO
-
-
1
µA VCB=40V, IE=0
Collector cut-off current
ICEO
-
-
10
µA VCE=30V, IB=0
Emitter Cut-Off Current
IEBO
-
-
1
µA VEB=6V, IC=0
DC Current Gain
hFE
60
-
400
VCE=2V, IC=1A
Collector to Emitter Saturation Voltage VCE(sat)
-
-
0.5
V IC=2A, IB=0.2A
Base to emitter Saturation Voltage
VBE(sat)
-
-
1.5
V IC=2A, IB=0.2A
Transition Frequency
fT
-
50
-
MHz VCE=5V, IC=0.1A, f=10MHz
http://www.SeCoSGmbH.com/
04-Nov-2014 Rev. A
Any changes of specification will not be informed individually.
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