BCP882H Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – 3A , 70 V NPN Plastic-Encapsulate Transistor

Elektronische Bauelemente
BCP882H
3A , 70 V
NPN Plastic-Encapsulate Transistor
FEATURES
Small Flat Package.
High DC Current Gain
Low V_CE(sat)
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
SOT-89
MARKING
D882H
123
A
E
C
CLASSIFICATION OF h_FE
Rank BCP882H-Y
Range
160~320
B
F
G
H
J
D
K
L
PACKAGE INFORMATION
Package
MPQ
Leader Size
1
SOT-89
1K
7 inch
Base
ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise specified)
Parameter
Symbol
Rating
Collector to Base Voltage
VCBO
70
Collector to Emitter Voltage
VCEO
70
Emitter to Base Voltage
VEBO
6
Continuous Collector Current
IC
3
Collector Power Dissipation
PC
500
Thermal Resistance Junction to Ambient
RθJA
250
Junction, Storage Temperature
TJ, TSTG
150, -55~150
Collector
2
3
Emitter
Unit
V
V
V
A
mW
°C / W
°C
4
1. Base
2. Collector
3. Emitter
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise specified)
Parameter
Symbol Min Typ Max Unit
Test condition
Collector to Base Breakdown Voltage
V(BR)CBO
70
-
-
V IC=100µA, IE=0
Collector to Emitter Breakdown Voltage V(BR)CEO
70
-
-
V IC=10mA, IB=0
Emitter to Base Breakdown Voltage
V(BR)EBO
6
-
-
V IE=100µA, IC=0
Collector Cut-Off Current
ICBO
-
-
1
µA VCB=40V, IE=0
Collector cut-off current
ICEO
-
-
10
µA VCE=30V, IB=0
Emitter Cut-Off Current
IEBO
-
-
1
µA VEB=6V, IC=0
DC Current Gain
hFE
160
-
320
VCE=2V, IC=1A
Collector to Emitter Saturation Voltage VCE(sat)
-
-
0.5
V IC=2A, IB=0.2A
Base to emitter Saturation Voltage
VBE(sat)
-
-
1.5
V IC=2A, IB=0.2A
Transition Frequency
fT
-
50
-
MHz VCE=5V, IC=0.1A, f=10MHz
http://www.SeCoSGmbH.com/
23-Aug-2017 Rev. C
Any changes of specification will not be informed individually.
Page 1 of 2