BCP882 Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – Epitaxial Planar Transistor

Elektronische Bauelemente
BCP882
NPN Silicon
Epitaxial Planar Transistor
RoHS Compliant Product
SOT-89
Description
The BCP882 is suited for the output stage of 1.5W
audio, voltage regulator, and relay driver.
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
4.4
4.6
4.05
4.25
1.50
1.70
1.30
1.50
2.40
2.60
0.89
1.20
REF.
G
H
I
J
K
L
M
Millimeter
Min. Max.
3.00 REF.
1.50 REF.
0.40 0.52
1.40 1.60
0.35 0.41
5q TYP.
0.70 REF.
Absolute Maximum Ratings at TA=25^oC
Symbol
V_CBO
VCEO
VEBO
IC
PD
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
TJ,Tstg
Junction and Storage Temperature
Value
40
30
5
3
1.2
-55~+150
Units
V
V
V
A
W
C^O
ELECTRICAL CHARACTERISTICS Tamb=25^oC unless otherwise specified
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
Collector Saturation Voltage
Base-Emitter Saturation Voltage
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Symbol
BVCBO
BV CEO
BVEBO
ICBO
IEBO
VCE(sat)
VBE(sat)
hFE1
hFE2
fT
Cob
Min
40
30
5
-
-
-
-
30
100
-
-
Typ.
-
-
-
-
-
-
-
-
-
90
45
Max Unit Test Conditions
-
V IC=100µA,IE=0
-
V IC= 1mA,IB=0
-
V IE= 10µA
1
uA V_{CB= 30V}
1
uA VEB=3V
0.5
V IC=2A,IB=0.2A
2
V IC=2A,IB=0.2A
-
VCE= 2 V, IC=20mA
500
VCE= 2 V, IC=1 A
-
MHz ^VCE= 5 ^{V, IC= 0.1A,f=100MHz}
-
pF ^{VCB=10V, f=1MHz,IE=0}
Classification of hFE
Rank
Range
Q
100~200
P
160~320
E
250~500
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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