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BCP772_15 Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – PNP Plastic Encapsulated Transistor
Elektronische Bauelemente
BCP772
-3 A, -40 V
PNP Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
The BCP772 is designed for using in output stage of
amplifier, voltage regulator, DC-DC converter and relay driver.
SOT-89
4
CLASSIFICATION OF hFE(2)
Product-Rank
BCP772-Q
Range
100~200
MARKING
772
 Date Code
PACKAGE INFORMATION
Package
MPQ
SOT-89
1K
BCP772-P
160~360
BCP772-E
250~500
123
A
E
C
B
D
Leader Size
7 inch

Base
Collector


Emitter
F
REF.
A
B
C
D
E
F
G
H
J
Millimeter
Min. Max.
4.40 4.60
3.94 4.25
1.40 1.60
2.25 2.60
1.50 1.85
0.89 1.20
K
L
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.40 0.58
1.50 TYP
3.00 TYP
0.32 0.52
0.35 0.44
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Ratings
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
VCBO
-40
VCEO
-30
VEBO
-5
Collector Current -Continuous
Collector Power Dissipation
Junction & Storage Temperature
IC
PD
TJ, TSTG
-3
1.2
-55~150
Unit
V
V
V
A
W
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol Min.
Typ.
Max. Unit
Test Conditions
Collector-base breakdown voltage
V(BR)CBO
-40
-
-
V IC=-100μA
Collector-emitter breakdown voltage V(BR)CEO
-30
-
-
V IC=-1mA
Emitter-base breakdown voltage
V(BR)EBO
-5
-
-
V IE=-10μA
Collector cut-off current
ICBO
-
-
-1
μA VCB=-30V
Emitter cut-off current
IEBO
-
-
-1
μA VBE=-3V
hFE(1)
30
-
-
VCE=-2V, IC= -20mA
DC current gain
hFE(2)
100
160
500
VCE=-2V, IC= -1A
hFE(3)
100
-
-
VCE=-2V, IC= -1mA
Collector-emitter saturation voltage
VCE(sat)
-
-0.3
-0.5
V IC=-2A, IB= -0.2A
Base-emitter saturation voltage
VBE(sat)
-
-1
-2
V IC=-2A, IB= -0.2A
Transition frequency
fT
-
80
-
MHz
VCE=-5V, IC=-20mA,
f=100MHz
Output Capacitance
COB
-
55
-
pF VCB=-10V, f=1MHz
http://www.SeCoSGmbH.com/
21-Sep-2011 Rev. B
Any changes of specification will not be informed individually.
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