BCP772 Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – General Purpose Transistor

Elektronische Bauelemente
RoHS Compliant Product
Description
The BCP772 is designed for using in output stage of amplifier,
voltage regulator, DC-DC converter and relay driver.
BCP772
PNP Epitaxial Planar
General Purpose Transistor
SOT-89
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
4.4
4.6
4.05
4.25
1.50
1.70
1.30
1.50
2.40
2.60
0.89
1.20
REF.
G
H
I
J
K
L
M
Absolute Maximum Ratings at TA=25^oC (unless otherwise specified)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collect Current
Total Power Dissipation (TC=25 ^oC)
Operating Junction and Storage Temperature Range
Symbol
VCBO
VCEO
VE BO
IC
PD
Tj, Tstg
Ratings
-40
-30
-5.
-3
1.2
-55~+150
Millimeter
Min. Max.
3.00 REF.
1.50 REF.
0.40 0.52
1.40 1.60
0.35 0.41
5q TYP.
0.70 REF.
Unit
V
V
V
A
W
o_C
ELECTRICAL CHARACTERISTICS Tamb=25^oC
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
Collector Saturation Voltage
Base Satruation Voltage
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
VBE(sat)
Min
-40
-30
-5
-
-
-
-
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
hFE1
30
hFE2
100
fT
-
Cob
-
unless otherwise specified
Typ.
-
-
-
-
-
Max Unit Test Conditions
-
V IC=-100µA
-
V IC=-1mA
-
V IE=-10µA
-1
uA VCB=-30V
-1
uA VBE=-3 V
-0.3 -0.5
-1
-2
V IC=- 2 A,IB=-0.2A
V IC=- 2A,IB=- 0.2A
-
-
VCE=-2 V, IC=-20mA
160 500
VCE=-2 V, IC=-1 A
80
-
MHz VCE=-5V, IC=- 20mA,f=100MHz
55
-
pF VCB=-10 _V, f=1MHz
Classification of hFE2
Rank
Range
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Q
100~200
P
160~320
E
250~500
Any changing of specification will not be informed individual
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