BCP69 Datasheet, PDF (1/2 Pages) NXP Semiconductors – PNP medium power transistor

Elektronische Bauelemente
Description
The BCP69 is designed for guse in
low voltage and medium power
applications.
Features
* VCEO : -20V
* IC : 1A
RoHS Compliant Product
BCP69
PNP Transistor
Silicon Epitaxial Transistor
SOT-223
BCP69
REF.
A
C
D
E
I
H
Millimeter
Min. Max.
6.70 7.30
2.90 3.10
0.02 0.10
0̓
10̓
0.60 0.80
0.25 0.35
REF.
B
J
1
2
3
4
5
Millimeter
Min. Max.
13̓TYP.
2.30 REF.
6.30 6.70
6.30 6.70
3.30 3.70
3.30 3.70
1.40 1.80
MAXIMUM RATINGS* (T_amb =25^oC, unless otherwise specified)
Symbol
Parameter
V_CBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current
PD
Total Power Dissipation
TJ,Tstg
Junction and Storage Temperature
Value
- 25
- 20
-5
-1
1.5
-65~-150
Units
V
V
V
A
W
C^O
ELECTRICAL CHARACTERISTICS Tamb=25^oC unless otherwise specified
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
Collector Saturation Voltage
Base-Emitter Voltage
DC Current Gain
Gain-Bandwidth Product
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)1
*VBE(on)
*hFE1
*hFE2
*hFE3
fT
Min
- 25
- 20
-5
-
-
-
-
50
85
60
-
Typ.
-
-
-
-
-
-
-
-
-
-
60
Max
-
-
-
- 10
- 10
- 500
- 1.0
-
375
-
-
Uni Test Conditions
V IC=-100µA, IE=0
V IC=-1mA, IB=0
V IE=-10µA, IC=0
uA VCB=- 25V, IE=0
uA VEB=-5V, IC=0
mV _{IC=-1mA, IB=-100mA}
V VCE=-1V, IC=-1A
VCE =-10V, IC=-5mA
VCE=-1V, IC=-500mA
VCE=-1V, IC=-1A
MHz VCE=- 5V, IC=-10 mA
*Pulse Test: Pulse WidthЉ380 s, Duty CycleЉ2%
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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