BCP669A Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – NPN Epitaxial Planar Transistor

Elektronische Bauelemente
BCP669A
1 W, 1.5 A, 180 V
NPN Epitaxial Planar Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURE
The BCP669A is designed for low frequency power amplifier.
SOT-89
A
E
B
F
G
H
J
4
123
C
D
K
L
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
4.40 4.60
3.94 4.25
1.40 1.60
2.30 2.60
1.50 1.70
0.89 1.20
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.40 0.58
1.50 TYP
3.00 TYP
0.32 0.52
0.35 0.44
ABSOLUTE MAXIMUM RATINGS (T_A = 25°C unless otherwise specified)
PARAMETER
SYMBOL
RATING
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
DC Collector Current
Pulse Collector Current
Collector Power Dissipation
Junction, Storage Temperature
VCBO
VCEO
VEBO
IC
IC
PD
TJ, TSTG
180
160
5
1.5
3
1
150, -55~150
UNIT
V
V
V
A
A
W
°C
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise specified)
PARAMETER
SYMBOL MIN TYP MAX UNIT
TEST CONDITION
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut-Off Current
Collector to Emitter Saturation Voltage
Base to Emitter Saturation Voltage
DC Current Gain
DC Current Gain
Transition Frequency
Collector Output Capacitance
BVCBO
BVCEO
BVEBO
ICBO
VCE(sat)
VBE(on)
hFE1
hFE2
fT
Cob
180
-
-
V IC=1mA, IE = 0A
160
-
-
V IC=10mA, IB = 0A
5
-
-
V IE=1mA, IC = 0A
-
-
10
µA VCB=160 V, IE = 0 A
-
-
1
V IC=600mA, IB=50mA
-
-
1.5
V VCE=5V, IC=150mA
60
-
200
VCE=5V, IC=150mA
30
-
-
VCE=5V, IC=500mA
-
140
-
MHz VCE = 5V, IC = 10mA, f = 100 MHz
-
14
-
pF VCB = 10V, f=1MHz
* Pulse Test: Pulse Width≦380µs, Duty Cycle≦2%
CLASSIFICATION OF h_FE
Rank
h_FE1
B
60~120
C
100~200
http://www.SeCoSGmbH.com/
12-Feb-2010 Rev. B
Any changes of specification will not be informed individually.
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