BCP56_15 Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – NPN Silicon Medium Power Transistor

Elektronische Bauelemente
BCP56
1A , 100V
NPN Silicon Medium Power Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
 For AF driver and output stages
 High collector current
 Low collector-emitter saturation voltage
 Complementary types: BCP53 (PNP)
CLASSIFICATION OF h_FE(2)
Product-Rank BCP56-16
Range
100~250
PACKAGE INFORMATION
Package
MPQ
SOT-223
2.5K
Leader Size
13’ inch
SOT-223
A
M
4
Top View _{C B}
K
L
E
1
2
3
D
F
GH
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
6.20 6.70
6.70 7.30
3.30 3.70
1.42 1.90
4.50 4.70
0.60 0.82
REF.
G
H
J
K
L
M
Millimeter
Min. Max.
-
0.10
-
-
0.25 0.35
-
-
2.30 REF.
2.90 3.10
ABSOLUTE MAXIMUM RATINGS (T_A = 25°C unless otherwise specified)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Storage Temperature
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_D
T_STG
Ratings
100
80
5
1
1.5
-65~+150
Unit
V
V
V
A
W
°C
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise specified)
Parameter
Symbol
Collector-base breakdown voltage
V_(BR)CBO
Collector-emitter breakdown voltage
V_(BR)CEO
Emitter-base breakdown voltage
V_(BR)EBO
Collector cut-off current
I_CBO
DC current gain¹
h_{FE (1)}
h_{FE (2)}
Collector-emitter saturation voltage¹
h_{FE (3)}
V_CE(sat)
Base-emitter voltage¹
V_BE(on)
Transition frequency
f_T
Note:
1. Pulse Test: Pulse Width≦380us, Duty Cycle≦2%.
Min.
100
80
5
-
100
100
40
-
-
100
Max.
-
-
-
100
-
250
-
0.5
1
-
Unit
V
V
V
nA
V
V
MHz
Test Conditions
I_C=0.1mA , I_E=0
I_C= 1mA, I_B=0
I_E= 10μA, I_C=0
V_CB= 30V, I_E=0
V_CE= 2V, I_C= 5mA
V_CE= 2V, I_C= 150mA
V_CE= 2V, I_C= 500mA
I_C=500mA, I_B= 50mA
V_CE= 2V, I_C= 500mA
V_CE= 5V, I_C= 10mA
http://www.SeCoSGmbH.com/
27-Mar-2013 Rev. E
Any changes of specification will not be informed individually.
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