BCP5551 Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – Planar Transistor

Elektronische Bauelemente
RoHS Compliant Product
Features
Designed for gereral prupose application requiring
high breakdown voltage.
BCP5551
NPN Epitaxial
Planar Transistor
SOT-89
1
2
3
1.BASE
2.COLLECTOR
3.EMITTER
Marking: ₅₅₅₁
XXXX
(xxxx = Date Code)
REF. _Min.
A
4.4
B
4.05
C
1.50
D
1.30
E
2.40
F
0.89
Max.
4.6
4.25
1.70
1.50
2.60
1.20
REF.
G
H
I
J
K
L
M
Min. Max.
3.00 REF.
1.50 REF.
0.40 0.52
1.40 1.60
0.35 0.41
5q TYP.
0.70 REF.
ABSOLUTE MAXIMUM RATINGS (Tamb=25^oC, unless otherwise specified)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Operating Junction and Storage Temperature
Symbol
V_CBO
V_CEO
V_EBO
IC
PD
T_J,TSTG
Value
180
160
6
600
1.2
-55 ~ +150
Unit
V
V
V
mA
W
o_C
ELECTRICAL CHARACTERISTICS (Tamb=25^oC)
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Saturation Voltage
Output Capacitance
Base-Emitter Voltage
DC Current Gain
Transition Frequency
Symbol
BV_CBO
BV _CEO
BV_EBO
ICBO
IEBO
VCE(sat)1
VCE(sat) 2
Cob
VBE(sat)1
VBE(sat)2
hFE1
hFE2
hFE3
fT
Min.
180
160
6
-
-
-
-
-
-
-
80
80
30
100
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
50
50
150
200
6
1
1
-
250
-
300
Unit
V
V
V
nA
nA
mV
mV
pF
V
V
MHz
Test Conditions
IC= 100µA
IC= 1mA
IE= 10µA
VCB= 120V
VEB= 4V
IC= 10mA, IB= 1mA
IC= 50mA, IB = 5mA
VCB= 10V, f=1MHz
IC= 10mA, IB= 1mA
IC= 50mA, IB= 5mA
VCE= 5V, IC= 1mA
VCE= 5V, IC= 10mA
VCE= 5V, IC= 50mA
VCE= 10V,IC= 10mA, f=100MHz
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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