BCP55 Datasheet, PDF (1/2 Pages) STMicroelectronics – MEDIUM POWER AMPLIFIER

Elektronische Bauelemente
BCP55
1A , 60V
NPN Silicon Medium Power Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
For AF driver and output stages
High collector current
Low collector-emitter saturation voltage
CLASSIFICATION OF h_FE
Product-Rank BCP55-16
Range
100~250
PACKAGE INFORMATION
Package
MPQ
SOT-223
2.5K
Leader Size
13’ inch
SOT-223
A
M
4
Top View _{C B}
K
L
E
1
2
3
D
F
GH
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
6.20 6.70
6.70 7.30
3.30 3.70
1.42 1.90
4.50 4.70
0.60 0.82
REF.
G
H
J
K
L
M
Millimeter
Min. Max.
-
0.10
-
-
0.25 0.35
-
-
2.30 REF.
2.90 3.10
ABSOLUTE MAXIMUM RATINGS (T_A = 25°C unless otherwise specified)
Parameter
Symbol
Ratings
Collector-Base Voltage
VCBO
60
Collector-Emitter Voltage
VCEO
60
Emitter-Base Voltage
VEBO
5
Collector Current -Continuous
IC
1
Collector Power Dissipation
PD
1.5
Typical Thermal Resistance
Storage Temperature
R_θJA
TSTG
83.3
-65~+150
Unit
V
V
V
A
W
°C /W
°C
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise specified)
Parameter
Collector-base breakdown voltage
Symbol
V(BR)CBO
Min.
60
Max.
-
Unit
V
Collector-emitter breakdown voltage
V(BR)CEO
60
-
V
Emitter-base breakdown voltage
V(BR)EBO
5
-
V
Collector cut-off current
ICBO
-
100
nA
25
-
DC current gain
h_FE
100
250
25
-
Collector-emitter saturation voltage¹
Base-emitter voltage¹
VCE(sat)
-
VBE(on)
-
0.5
V
1
V
Transition frequency
fT
100
-
MHz
Test Conditions
IC=0.1mA , IE=0
IC= 10mA, IB=0
IE= 10µA, IC=0
VCB= 30V, IE=0
VCE= 2V, IC= 5mA
VCE= 2V, IC= 150mA
VCE= 2V, IC= 500mA
IC=500mA, IB= 50mA
VCE= 2V, IC= 500mA
VCE=10V, IC=50mA, f=100MHz
http://www.SeCoSGmbH.com/
11-Aug-2014 Rev. A
Any changes of specification will not be informed individually.
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