BCP53_15 Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – PNP Silicon Medium Power Transistor

Elektronische Bauelemente
BCP53
-1A , -100V
PNP Silicon Medium Power Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
 Collector-Emitter Voltage:V_CEO= -80V
 Complementary types: BCP56 (NPN)
CLASSIFICATION OF h_{FE (2)}
Product-Rank BCP53-10 BCP53-16
Range
63~160
100~250
PACKAGE INFORMATION
Package
MPQ
SOT-223
2.5K
LeaderSize
13’ inch
SOT-223
A
M
4
Top View _{C B}
K
L
E
1
2
3
D
F
GH
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
6.20 6.70
6.70 7.30
3.30 3.70
1.42 1.90
4.50 4.70
0.60 0.82
REF.
G
H
J
K
L
M
Millimeter
Min. Max.
-
0.10
-
-
0.25 0.35
-
-
2.30 REF.
2.90 3.10
ABSOLUTE MAXIMUM RATINGS (T_A = 25°C unless otherwise specified)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_D
T_j
Ratings
-100
-80
-5
-1
1.5
150
Unit
V
V
V
A
W
°C
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise specified)
Parameter
Symbol
Collector-base breakdown voltage
V_(BR)CBO
Collector-emitter breakdown voltage
V_(BR)CEO
Emitter-base breakdown voltage
V_(BR)EBO
Collector cut-off current
I_CBO
DC current gain¹
h_{FE (1)}
h_{FE (2)}
Collector-emitter saturation voltage¹
h_{FE (3)}
V_CE(sat)
Base-emitter voltage¹
V_BE(on)
Transition frequency
f_T
Note:
1. Pulse Test: Pulse Width≦380us, Duty Cycle≦2%.
Min.
-100
-80
-5
63
63
40
100
Max.
-100
250
-0.5
-1
Unit
V
V
V
nA
V
V
MHz
Test Conditions
I_C= -0.1mA , I_E=0
I_C= -1mA, I_B=0
I_E= -10μA, I_C=0
V_CB= -30V, I_E=0
V_CE= -2V, I_C= -5mA
V_CE= -2V, I_C= -150mA
V_CE= -2V, I_C= -500mA
I_C= -500mA, I_B= -50mA
V_CE= -2V, I_C= -500mA
V_CE= -5V, I_C= -10mA, f=100MHZ
http://www.SeCoSGmbH.com/
25-Jan-2011 Rev. B
Any changes of specification will not be informed individually.
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