BCP51_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

Elektronische Bauelemente
BCP51
-1A , -45V
PNP Silicon Medium Power Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Collector-Emitter Voltage:V_CEO= -45V
Complementary types: BCP54 (NPN)
CLASSIFICATION OF h_{FE (2)}
Product-Rank BCP51-16
Range
100~250
PACKAGE INFORMATION
Package
MPQ
SOT-223
2.5K
Leader Size
13’ inch
1
Base
SOT-223
A
M
4
Top View _{C B}
K
L
E
1
2
3
Collector _F
2
4
3
Emitter
REF.
A
B
C
D
E
F
D
GH
Millimeter
Min. Max.
6.20 6.70
6.70 7.30
3.30 3.70
1.42 1.90
4.50 4.70
0.60 0.82
REF.
G
H
J
K
L
M
J
Millimeter
Min. Max.
-
0.10
-
-
0.25 0.35
-
-
2.30 REF.
2.90 3.10
ABSOLUTE MAXIMUM RATINGS (T_A = 25°C unless otherwise specified)
Parameter
Symbol
Ratings
Collector-Base Voltage
VCBO
-45
Collector-Emitter Voltage
VCEO
-45
Emitter-Base Voltage
VEBO
-5
Collector Current -Continuous
IC
-1
Collector Power Dissipation
PD
1.5
Junction Temperature
Tj
150
Unit
V
V
V
A
W
°C
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise specified)
Parameter
Collector-base breakdown voltage
Symbol
V(BR)CBO
Min.
-45
Max.
-
Unit
V
Collector-emitter breakdown voltage
V(BR)CEO
-45
-
V
Emitter-base breakdown voltage
V(BR)EBO
-5
-
V
Collector cut-off current
ICBO
-
-100
nA
DC current gain¹
Collector-emitter saturation voltage¹
Base-emitter voltage¹
h_FE (1)
25
-
h_FE (2)
100
250
h_FE (3)
25
-
VCE(sat)
-
-0.5
V
VBE(on)
-
-1
V
Transition frequency
fT
100
Note:
1. Pulse Test: Pulse Width≦380us, Duty Cycle≦2%.
-
MHz
Test Conditions
IC= -0.1mA , IE=0
IC= -10mA, IB=0
IE= -10µA, IC=0
VCB= -30V, IE=0
VCE= -2V, IC= -5mA
VCE= -2V, IC= -150mA
VCE= -2V, IC= -500mA
IC= -500mA, IB= -50mA
VCE= -2V, IC= -500mA
VCE= -10V, IC= -50mA, f=100MHz
http://www.SeCoSGmbH.com/
11-Aug-2014 Rev. A
Any changes of specification will not be informed individually.
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