BCP3906_15 Datasheet, PDF (1/1 Pages) SeCoS Halbleitertechnologie GmbH – PNP Epitaxial Planar Transistor

Elektronische Bauelemente
BCP3906
-0.2A, -40V
PNP Epitaxial Planar Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Complementary to BCP3904
Low Current
Low Voltage
MARKING
SOT-89
4
123
A
E
C
2A
PACKAGE INFORMATION
Package
MPQ
SOT-89
1K
Leader Size
7’ inch
1
Base
B
D
Collector
2
3
Emitter
F
REF.
A
B
C
D
E
F
G
H
J
K
L
Millimeter
Min. Max.
4.40 4.60
3.94 4.25
1.40 1.60
2.30 2.60
1.50 1.70
0.89
1.2
0
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.40 0.58
1.50 TYP
3.00 TYP
0.32 0.52
0.35 0.44
ABSOLUTE MAXIMUM RATINGS (T_A = 25°C unless otherwise noted)
Parameter
Symbol
Ratings
Collector-Base Voltage
VCBO
-40
Collector-Emitter Voltage
VCEO
-40
Emitter-Base Voltage
VEBO
-6
Collector Current -Continuous
IC
-0.2
Collector Power Dissipation
PC
0.5
Junction & Storage temperature
TJ, TSTG
150, -55~150
Unit
V
V
V
A
W
°C
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown
vEomltiattgeer-base _{breakdown voltage}
Collector cut-off current
Emitter cut-off current
Collector ut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector Capacitance
Emitter Capacitance
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
ICEX
hFE(1)
hFE(2)
hFE(3)
hFE(4)
hFE(5)
VCE(sat)1
VCE(sat)2
VBE(sat)1
VBE(sat)2
fT
CC
CE
Min.
-40
-40
-6
-
-
-
60
80
100
60
30
-
-
-0.65
-
250
-
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
4.5
10
Max.
-
-
-
-0.05
-0.05
-0.05
-
-
300
-
-
-0.25
-0.4
-0.85
-0.95
-
-
-
Unit
V
V
V
µA
µA
µA
-
-
-
-
-
V
V
V
V
MHz
pF
pF
Noise Figure
NF
-
4
-
dB
Delay Time
Rise Time
Storage Time
Fall Time
TD
-
35
-
TR
TS
-
35
-
-
225
-
nS
TF
-
75
-
Test Conditions
IC= -10µA, IE=0
IC= -1mA, IB=0
IE= -10µA, IC=0
VCB= -30V, IE=0
VEB= -6V, IC=0
VCB= -30V, VBE(off)= -3V
VCE= -1V, IC= -0.1mA
VCE= -1V, IC= -1mA
VCE= -1V, IC= -10mA
VCE= -1V, IC= -50mA
VCE= -1V, IC= -100mA
IC= -10mA, IB= -1mA
IC= -50mA, IB= -5mA
IC= -10mA, IB= -1mA
IC= -50mA, IB= -5mA
VCE= -20V, IC= -10mA, f=100MHz
VCB= -5V, IE=0, f=1MHz
VEB= -0.5V, IC=0, f=1MHz
VCE= -5V, IC= -0.1mA,
f=10Hz~15.7kHz, RS=1KΩ
IC= -10mA, IB1= -IB2= -1mA
http://www.SeCoSGmbH.com/
14-Jul-2014 Rev. A
Any changes of specification will not be informed individually.
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