BCP3904 Datasheet, PDF (1/1 Pages) SeCoS Halbleitertechnologie GmbH – 0.2A, 60V NPN Epitaxial Planar Transistor

Elektronische Bauelemente
BCP3904
0.2A, 60V
NPN Epitaxial Planar Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Complementary to BCP3906
Low Current
Low Voltage
MARKING
SOT-89
4
123
A
E
C
1A
B
D
PACKAGE INFORMATION
Package
MPQ
SOT-89
1K
Leader Size
7’ inch
1
Base
Collector
2
3
Emitter
F
G
H
J
K
L
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
4.40 4.60
3.94 4.25
1.40 1.60
2.30 2.60
1.50 1.70
0.89
1.2
0
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.40 0.58
1.50 TYP
3.00 TYP
0.32 0.52
0.35 0.44
ABSOLUTE MAXIMUM RATINGS (T_A = 25°C unless otherwise noted)
Parameter
Symbol
Ratings
Collector-Base Voltage
VCBO
60
Collector-Emitter Voltage
VCEO
40
Emitter-Base Voltage
VEBO
6
Collector Current -Continuous
IC
0.2
Collector Power Dissipation
PC
0.5
Junction & Storage temperature
TJ, TSTG
150, -55~150
Unit
V
V
V
A
W
°C
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown
vEomltiattgeer-base _{breakdown voltage}
Collector cut-off current
Emitter cut-off current
Collector ut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector Capacitance
Emitter Capacitance
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
ICEX
hFE(1)
hFE(2)
hFE(3)
hFE(4)
hFE(5)
VCE(sat)1
VCE(sat)2
VBE(sat)1
VBE(sat)2
fT
CC
CE
Min.
60
40
6
-
-
-
60
80
100
60
30
-
-
0.65
-
300
-
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
4
8
Max.
-
-
-
0.05
0.05
0.05
-
-
300
-
-
0.2
0.3
0.85
0.95
-
-
-
Unit
V
V
V
µA
µA
µA
V
V
V
V
MHz
pF
pF
Noise Figure
NF
-
5
-
dB
Delay Time
Rise Time
Storage Time
Fall Time
TD
-
35
-
TR
TS
-
35
-
-
200
-
nS
TF
-
50
-
Test Conditions
IC=10µA, IE=0
IC=1mA, IB=0
IE=10µA, IC=0
VCB=30V, IE=0
VEB=6V, IC=0
VCE=30V, VBE(off)=3V
VCE=1V, IC=0.1mA
VCE=1V, IC=1mA
VCE=1V, IC=10mA
VCE=1V, IC=50mA
VCE=1V, IC=100mA
IC=10mA, IB=1mA
IC=50mA, IB=5mA
IC=10mA, IB=1mA
IC=50mA, IB=5mA
VCE=20V, IC=10mA, f=100MHz
VCB=5V, IE=0, f=1MHz
VEB=0.5V, IC=0, f=1MHz
VCE=5V, IC=0.1mA,
f=10Hz~15.7kHz, RS=1KΩ
IC=10mA, IB1= -IB2=1mA
http://www.SeCoSGmbH.com/
14-Jul-2014 Rev. A
Any changes of specification will not be informed individually.
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