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BCP2098 Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – Epitaxial Planar Transistor
Elektronische Bauelemente
BCP2098
NPN Silicon
Epitaxial Planar Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The BCP2098 is an epitaxial planar type NPN silicon transistor.
FEATURES
 Excellent DC Current Gain Characteristics
 Low Saturation Voltage, Typically VCE(SAT)=0.25V
At IC / IB=4A / 0.1A
CLASSIFICATION OF hFE (1)
Product-Rank BCP2098-Q BCP2098-R
Range
120~270
180~390
PACKAGE INFORMATION
Package
MPQ
SOT-89
1K
Leader Size
13’ inch
SOT-89
4
123
A
E
C
B
F
G
H
J
D
K
L
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
4.40 4.60
3.94 4.25
1.40 1.60
2.30 2.60
1.50 1.70
0.89 1.20
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.40 0.58
1.50 TYP
3.00 TYP
0.32 0.52
0.35 0.44
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Collector Current -Continuous
IC
Collector Current (Pulse) 1
ICP
Total Power Dissipation
PD
Junction & Storage temperature
TJ, TSTG
Note:
1. Single pulse, PW=10ms.
2. When mounted on a 40*40*0.7mm ceramic board.
Ratings
50
20
6
5
10
0.5(2.0) 2
-55~150
Unit
V
V
V
A
A
W
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameters
Collector-base breakdown voltage
Collector-emitter
breakdown
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage1
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE
VCE(sat)
Min.
50
20
6
-
-
120
-
Typ.
-
-
-
-
-
-
0.25
Transition frequency
fT
-
150
Output Capacitance
COB
-
30
Note:
1. Measured under pulse condition. Pulse width≦300s, Duty Cycle≦2%.
Max.
-
-
-
0.5
0.5
390
1
-
-
Unit Test Conditions
V
V
V
μA
μA
V
MHz
pF
IC=50μA, IE=0
IC=1mA, IB=0
IE=50μA, IC=0
VCB=40V, IE=0
VEB=5V, IC=0
VCE=2V, IC=0.5A
IC=4A, IB=0.1A
VCE=6V, IC=50mA,
f=100MHz
VCB=20V, IE=0, f=1MHz
http://www.SeCoSGmbH.com/
19-May-2011 Rev. B
Any changes of specification will not be informed individually.
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