BCP194 Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – Planar Medium Power Transistor

Elektronische Bauelemente
Description
The BCP194 is designed for medium
power amplifier applications.
Features
* 1 Amp Continuous Current
* 60 Volt VCEO
* Complementary to BCP195
BCP194
NPN Silicon
Planar Medium Power Transistor
RoHS Compliant Product
SOT-89
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
4.4
4.6
4.05
4.25
1.50
1.70
1.30
1.50
2.40
2.60
0.89
1.20
REF.
G
H
I
J
K
L
M
Millimeter
Min. Max.
3.00 REF.
1.50 REF.
0.40 0.52
1.40 1.60
0.35 0.41
5q TYP.
0.70 REF.
Absolute Maximum Ratings at TA=25^oC
Symbol
V_CBO
VCEO
VEBO
IC
IB
PD
TJ,Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Total Power Dissipation
Junction and Storage Temperature
Value
80
60
5
1
2
200
1
-55~+150
Units
V
V
V
A
mA
W
C^O
ELECTRICAL CHARACTERISTICS Tamb=25^oC unless otherwise specified
Parameter
Symbol Min Typ. Max
Collector-Base Breakdown Voltage
BVCBO
80
Collector-Emitter Breakdown Voltage *BVCEO
60
Emitter-Base Breakdown Voltage
BVEBO
5
Collector-Base Cutoff Current
ICBO
-
Emitter-Base Cutoff Current
ICES
-
Emitter-Base Cutoff Current
IEBO
-
-
-
-
-
-
-
-
100
-
100
-
100
Collector Saturation Voltage
*VCE(sat)1 -
*VCE(sat)2 -
-
0.25
-
0.5
Base-Emitter Saturation Voltage
*VBE(sat)
-
*VBE(on)
-
-
1.1
-
1
*hFE1
100
-
-
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
*hFE2
100
-
300
*hFE3
80
-
-
*hFE4
30
-
-
fT
150
-
-
Cob
-
-
10
* Measured under pulse condition.Pulse width 300µs, Duty Cycle 2%
Unit
V
V
V
nA
nA
nA
V
V
V
V
MHz
pF
Test Conditions
I C=100 µA,IE=0
IC=10 mA,IB=0
I E=100 µA,IC=0
VCB= 60V,IE=0
VCES=60V
VEB=4V,IC=0
IC=500m A,IB=50mA
IC=1 A,IB=100mA
IC=1 A,IB=100mA
IC=1 A,VCE=5V
VCE= 5 V, IC=1mA
VCE= 5 V, IC=500mA
VCE= 5 V, IC=1A
VCE= 5 V, IC=2 A
VCE= 10V, IC=50m A,f=100MHz
VCB=10V, f=1MHz,IE=0
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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