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| BCP157_15 Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – PNP Epitaxial Planar Transistor | |||
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Elektronische Bauelemente
BCP157
-3A, -80V
PNP Epitaxial Planar Transistor
RoHS Compliant Product
A suffix of â-Câ specifies halogen & lead-free
FEATURES
ï¬ -60Volt VCEO
ï¬ 3 Amp continuous current
ï¬ Low saturation voltage
PACKAGE INFORMATION
Package
MPQ
SOT-89
1K
Leader Size
7â inch
SOT-89
4
123
A
E
C
ïªï
Base
B
D
F
Collector
ï«ïï
ï¬ï
Emitter
G
H
K
J
L
REF.
A
B
C
D
E
F
Millimeter
Min.
4.40
3.94
1.40
2.30
Max.
4.60
4.25
1.60
2.60
1.50 1.70
0.89
1.2
REF.
G
H
J
K
L
1. Base
2. Collector
3. Emitter
Millimeter
Min.
0.40
1.50
3.00
0.32
Max.
0.58
TYP
TYP
0.52
0.35 0.44
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Parameter
Symbol
Ratings
Collector-Base Voltage
VCBO
-80
Collector-Emitter Voltage
VCEO
-60
Emitter-Base Voltage
VEBO
-5
Collector Current -Continuous
DC
Pulse1
IC
-3
-6
Collector Power Dissipation
Junction & Storage temperature
PC
PC2
TJ, TSTG
0.5
2
150, -55~150
Unit
V
V
V
A
W
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
Min.
-80
-60
-5
-
-
70
Typ.
-
-
-
-
-
200
DC current gain
hFE
100
200
80
170
40
150
Collector-emitter saturation voltage
VCE(sat)1
VCE(sat)2
-
-
-150
-450
Base-emitter saturation voltage
VBE(sat)
-
-0.9
Base-emitter saturation voltage On VBE(ON)
-
-0.8
Output capacitance
CCO
-
-
Transition frequency
fT
100
140
Switching Time
TON
TOFF
-
40
-
450
Note:
1. Measured under pulse condition. Pulse width<300us, Duty cycle<2%
2. Spice parameter data is available upon urquest for this device.
Max.
-
-
-
-0.1
-0.1
-
300
-
-
-300
-600
-1.25
-1
30
-
-
-
Unit
V
V
V
μA
μA
mV
mV
V
V
pF
MHz
nS
Test Conditions
IC= -100μA, IE=0
IC= -10mA, IB=0
IE= -100μA, IC=0
VCB= -60V, IE=0
VEB= -4V, IC=0
VCE= -2V, IC= -50mA
VCE= -2V, IC= -500mA
VCE= -2V, IC= -1A
VCE= -2V, IC= -2A
IC= -1A, IB= -100mA
IC= -3A, IB= -300mA
IC= -1A, IB= -100mA
IC= -1A, VCE= -2V
VCB= -10V, IE=0, f=1MHz
VCE= -5V, IC= -100mA, f=100MHz
VCC= -10V,IC= -500mA,
IB1= -IB2= -50mA
http://www.SeCoSGmbH.com/
12-Nov-2014 Rev. B
Any changes of specification will not be informed individually.
Page 1 of 2
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