BCP157 Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – Medium Power Transistor

Elektronische Bauelemente
BCP157
PNP Silicon
Medium Power Transistor
RoHS Compliant Product
Features
1. -60Volt V CEO
2. 3 Amp continuous current
3. Low saturation voltage
SOT-89
1.BASE
2.COLLECTOR
3.EMITTER



D
D1
A
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Parameter
Symbol
Collector-base voltage
VCBO
Collector-emitter voltage
VCEO
Emitter-base voltage
VEBO
Collector current
IC
Limits
-80
-60
-5
-3
-6
Total power
dissipation
0.5
PC
2
Junction temperature
Tj
Storage temperature
Tstg
∗1 Single pulse, Pw=10ms
∗2 When mounted on a 40×40×0.7 mm ceramic board.
150
−55~+150
Unit
V
V
V
A(DC)
A(Pulse)∗1
W
W ∗2
°C
°C
b1
b
C
e
e1
Symbol
A
b
b1
c
D
D1
E
E1
e
e1
L
Dimensions In Millimeters
Min
Max
1.400
1.600
0.320
0.520
0.360
0.560
0.350
0.440
4.400
4.600
1.400
1.800
2.300
2.600
3.940
4.250
1.500TYP
2.900
3.100
0.900
1.100
Dimensions In Inches
Min
Max
0.055
0.063
0.013
0.020
0.014
0.022
0.014
0.017
0.173
0.181
0.055
0.071
0.091
0.102
0.155
0.167
0.060TYP
0.114
0.122
0.035
0.043
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Parameter
Symbol Min.
Collector-base breakdown voltage BVCBO -80
Collector-emitter breakdown voltage BVCEO -60
Emitter-base breakdown voltage
BVEBO -5
Collector cutoff current
ICBO
−
Emitter cutoff current
IEBO
−
Collector-emitter saturation voltage 1 VCE(sat)1 −
Collector-emitter saturation voltage 2 VCE(Sat)2
Base-emitter saturation voltage Sat VBE(Sat) ^−
Base-emitter saturation voltage On VBE(On)
−
Output capacitance
Cob
−
Current Gain - Bandwidth Product
fT
100
Switching Time
ton
−
toff
−
hFE1 70
Current Gain
hFE2 100
hFE3 80
hFE4 ₄₀
Typ.
−
−
−
−
−
-150
-450
-0.9
-0.8
−
140
40
450
200
200
170
150
Max.
−
−
−
0.1
0.1
-300
-600
-1.25
-1.0
30
−
−
−
300
Unit
Conditions
V IC=−100µA, IE=0
V IC=−10mA, IB=0
V IE=−100 µA, IC=0
µA VCB=−60V, IE=0
µA VEB=−4V, IC=0
mV IC=−1A,IB=-100mA
mV IC=-3A,IB=-300mA
V IC=-1A, IB=-100mA
V VCE=-2V, IC=-1A
pF VCB=−10V, IE=0A, f=1MHz
MHz VCE=−5V, IC=-100mA, f=100MHz
ns ^{VCC=-10V, IC=-500mA,}
IB1=IB2=-50mA
VCE=-2V, IC=-50mA
VCE=-2V, IC=-500mA
VCE=-2V, IC=-1A
VCE=-2V, IC=-2A
Note: Measured under pulse condition. Pulse width<300us, Duty cycle<2%
Spice parameter data is available upon urquest for this device.
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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