BC847S Datasheet, PDF (1/3 Pages) Siemens Semiconductor Group – NPN Silicon AF Transistor Array (For AF input stages and driver applications High current gain)

Elektronische Bauelemente
RoHS Compliant Product
BC847S
NPN Silicon
Multi-Chip Transistor
SOT-363
* Features
Power dissipation
PCM : 0.3 W (Tamp.= 25^OC)
Collector current
ICM : 0.2 A
Collector-base voltage
V(BR)CBO : 50 V
Operating & Storage junction Temperature
O
O
Tj, Tstg : -55 C~ +150 C
C₁
B2
E2
.055(1.40)
.047(1.20)
8^o
.026TYP
0^o
(0.65TYP)
.021REF
(0.525)REF
.096(2.45)
.085(2.15)
.053(1.35)
.045(1.15)
.014(0.35)
.006(0.15)
.087(2.20)
.079(2.00)
.043(1.10)
.035(0.90)
.018(0.46)
.010(0.26)
.006(0.15)
.003(0.08)
.004(0.10)
.000(0.00)
.039(1.00)
.035(0.90)
E₁
B1
C2
Dimensions in inches and (millimeters)
Electrical Characteristics( Tamb=25^OC unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
hFE(1)
VCE(sat)
VCE(sat)(2)
VBE
VBE(2)
fT
Cob
Test conditions
Ic=10µA, IE=0
Ic=10mA, IB=0
IE=10µA, IC=0
VCB=30V, IE=0
VCE=5V, IC=2mA
IC=10mA, IB=0.5mA
IC=100mA, IB=5mA
VCE=5V, IC=2mA
VCE=5V, IC=10mA
VCE=5V, IC=20mA , f=100MHz
VCB=10V, IE=0, f=1MHz
MIN TYP MAX UNIT
50
V
45
V
6
V
15
nA
110
630
0.25 V
0.65 V
0.7
V
0.77 V
200
MHz
2
pF
http://www.SeCoSGmbH.com
01-Jan-2006 Rev. B
Any changing of specification will not be informed individual
Page 1 of 3