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| BC847PN_15 Datasheet, PDF (1/3 Pages) SeCoS Halbleitertechnologie GmbH – NPN - PNP Silicon Multi-Chip Transistor | |||
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Elektronische Bauelemente
RoHS Compliant Product
FEATURE
ï Epitaxial Die Construction
ï Two internal isolated NPN/PNP transistors in one package
ï Power Dissipation
PCM : 0.2 W (Temp. = 25ËC)
ï Collector Current
ICM : 0.1A
ï Collector-base Voltage
V(BR)CBO : 50/-50 V
ï Operating & Storage Junction Temperature
TJ, TSTG : -55ËC~+150ËC
MARKING
ï¯ï ï®ï ïï
C1 B2 E2
7P
BC847PN
NPN - PNP Silicon
Multi-Chip Transistor
SOT-363
ïªï ï«ï ï¬ï
E1 B1 C2
ABSOLUTE MAXIMUM RATINGS OF TR1 at Ta = 25°C
PARAMETER
SYMBOL
VALUE
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Currrent â Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
VCBO
VCEO
VEBO
IC
PC
TJ
TSTG
50
45
6
100
200
150
-55 ~ +150
ELECTRICAL CHARACTERISTICS OF TR1 (NPN Transister) at Ta = 25°C
CHARACTERISTIC
TEST CONDITION
SYMBOL MIN. TYP.
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
IC=10μA, IE=0
IC = 10 mA, IB = 0
V(BR)CBO
50
V(BR)CEO
45
Emitter-Base Breakdown Voltage
IE=1μA, IC=0
V(BR)EBO
6
Collector Cutoff Current
VCB=30V, IE=0
ICBO
Emitter Cutoff Current
VEB=5V, IC=0
IEBO
DC Current Gain
VCE=5V, IC=2mA
hFE
200
Collector-emitter Saturation Voltage
IC=10mA, IB=0.5mA
IC=100mA, IB=5mA
VCE(sat)
VCE(sat)
IC=10mA, IB=0.5mA
VBE(sat)
0.7
Base-Emitter Saturation Voltage
IC=100mA, IB=5mA
VBE(sat)
0.9
Base-Emitter Voltage
Collector Output Capacitance
Transition Frequency
Noise Figure
IC=10mA, VCE=5V
IC=10mA, VCE=5V
VCB=10V, IE=0, f=1MHz
VCE=5V, IC=10mA, f=100MHz
VCE=5V, IC=0.2mA, f=1kHz
Rg=2Kâ¦, â³f=200Hz
VBE(On)
VBE(On)
Cob
fT
NF
0.58
100
UNITS
V
V
V
mA
mW
â
â
MAX.
15
15
450
0.25
0.6
0.7
0.72
6.0
UNIT
V
V
V
nA
nA
V
V
V
V
V
V
pF
MHz
10
dB
20-Oct-2009 Rev. C
Page 1 of 3
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