BC847BV_15 Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – Dual NPN Transistors

Elektronische Bauelemente
BC847BV
Dual NPN Transistors
Plastic-Encapsulate Transistors
FEATURES
* Epitaxial Die Construction
* ^{Complementary PNP Type Available}
(BC857BV)
* ^{Ultra-Small Surface Mount Package}
RoHS Compliant Product
.012(0.30)
.004(0.10)
.067(1.70)
.059(1.50)
Marking:K4V
SOT-563
.051(1.30)
.043(1.10)
.002(0.05)
.000(0.00)
.022(0.55)
.018(0.45)
.011(0.27)
.007(0.17)
.067(1.70)
.059(1.50)
7^o REF.
.024(0.60)
.021(0.525)
.006(0.16)
.004(0.09)
MAXIMUM RATINGS* T_A=25. unless otherwise noted
Symbol
Parameter
V_CBO
Collector-Base Voltage
V_CEO
Collector-Emitter Voltage
V_EBO
Emitter-Base Voltage
I_C
Collector Current -Continuous
P_C
Collector Dissipation
RθJA
Thermal Resistance. Junction to Ambient Air
T_J
Junction Temperature
T_stg
Storage Temperature
7^o RE . ^F
Dimensions in inches and (millimeters)
Value
Units
50
V
45
V
6
V
0.1
A
0.15
833
150
-55-150
W
o_C/W
o_C
o_C
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter
Symbol Test conditions
MIN
Collector-base breakdown voltage
V_(BR)CBO I_C=10µA,I_E=0
50
Collector-emitter breakdown voltage
V_(BR)CEO I_C=10mA,I_B=0
45
Emitter-base breakdown voltage
V_(BR)EBO I_E=1µA,I_C=0
6
Collector cut-off current
I_CBO
V_CB=30V,I_E=0
Emitter cut-off current
I_EBO
V_EB=5V,I_C=0
DC current gain
h_FE(1) V_CE=5V,I_C=2mA
200
Collector-emitter saturation voltage
Base-emitter saturation voltage
V_CE(sat)
V_BE(sat)
I_C=10mA,I_B=0.5mA
I_C=100mA,I_B=5mA
I_C=10mA,I_B=0.5mA
I_C=100mA,I_B=5mA
Base-emitter voltage
V_CE=5V,I_C=2mA
580
V_BE
V_CE=5V,I_C=10mA
Transition frequency
f_T
V_CE=5V,I_C=10mA,f= 100MHz
100
Output capacitance
C_ob
V_CB=10V,I_E=0,f=1MHz
Noise Figure
V_CE=5V,Rs=2kΩ,
NF
f=1kHz,BW=200Hz
TYP MAX UNIT
V
V
V
15
nA
100
nA
450
100
mV
300
700
900
mV
660 700
mV
770
MHz
4.5
pF
10
dB
http://www.SeCoSGmbH.com
23-Mar-2007 Rev. A
Any changing of specification will not be informed individual
Page 1 of 2