BC846S_15 Datasheet, PDF (1/1 Pages) SeCoS Halbleitertechnologie GmbH – Plastic-Encapsulate

Elektronische Bauelemente
BC846S
Plastic-Encapsulate
Multi-Chip (NPN+NPN) Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
 Two transistors in one package
 Reduces number of components and board space
 No mutual interference between the transistors
MARKING：
4Ft
PACKAGE INFORMATION
Package
MPQ
SOT-363
3K
Leader Size
7 inch
SOT-363
A
E
6
5
4^L
B
F¹
2
3
C
H
Top View
DG
K
J
REF.
A
B
C
D
E
F
Millimeter
Min.
2.00
2.15
1.15
0.90
Max.
2.20
2.45
1.35
1.10
1.20 1.40
0.15 0.35
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.100 REF.
0.525 REF.
0.08 0.15
8°
0.650 TYP.
ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise noted)
Parameter
Symbol
Value
Collector-Base Voltage
V_(BR)CBO
80
Collector-Emitter Voltage
V_(BR)CEO
65
Emitter-Base Voltage
V_(BR)EBO
6
Collector Current
I_C
0.1
Collector Power Dissipation
P_C
200
Junction & Storage Temperature
T_J, T_STG
150, -65~150
Unit
V
V
V
A
mW
°C
ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise noted)
Parameter
Symbol ^Min.
Typ.
Max.
Collector-Base Breakdown Voltage V_(BR)CBO
80
-
-
Collector-Emitter Breakdown Voltage V_(BR)CEO
65
-
-
Emitter-Base Breakdown Voltage
V_(BR)EBO
6
-
-
Collector Cut-Off Current
I_CBO
-
-
15
Emitter Cut-Off Current
I_EBO
-
-
5
DC Current Gain
h_FE
110
-
-
Collector-Emitter Saturation Voltage ^VCE(sat)
-
V_CE(sat)
-
-
0.1
-
0.3
Base-Emitter Saturation Voltage
V_BE(sat)
-
0.77
-
Transition Frequency
f_T
100
-
-
Collector Output Capacitance
C_ob
-
-
1.5
Unit
V
nA
μA
V
V
V
MHz
pF
Test Conditions
I_C=10μA, I_E=0
I_C=10mA , I_B=0
I_E=10μA , I_C=0
V_CB= 30V, I_E=0
V_EB=5V, I_C=0
V_CE=5V, I_C=2mA
I_C=10mA, I_B=0.5mA
I_C=100mA, I_B=5mA
I_C=10mA, I_B=0.5mA
V_CB=5V, I_E=10mA,
f=100MHz
V_CB=10V, I_E=0, f=1MHz
http://www.SeCoSGmbH.com/
20-Nov-2013 Rev. B
Any changes of specification will not be informed individually.
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