BC846S Datasheet, PDF (1/1 Pages) NXP Semiconductors – NPN general purpose double transistor

Elektronische Bauelemente
BC846S
Plastic-Encapsulate
Multi-Chip (NPN+NPN) Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Two transistors in one package
Reduces number of components and board space
No mutual interference between the transistors
SOT-363
A
E
L
6
5
4
MARKING：
4Ft
PACKAGE INFORMATION
Package
MPQ
SOT-363
3K
Leader Size
7 inch
B
F¹
2
3
C
H
Top View
DG
K
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.00 2.20
2.15 2.45
1.15 1.35
0.90 1.10
1.20 1.40
0.15 0.35
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.100 REF.
0.525 REF.
0.08 0.15
8°
0.650 TYP.
ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise noted)
Parameter
Symbol
Value
Collector-Base Voltage
V(BR)CBO
80
Collector-Emitter Voltage
V(BR)CEO
65
Emitter-Base Voltage
V(BR)EBO
6
Collector Current
IC
0.1
Collector Power Dissipation
PC
200
Junction & Storage Temperature
TJ, TSTG
150, -65~150
Unit
V
V
V
A
mW
°C
ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise noted)
Parameter
Symbol ^Min.
Typ.
Max.
Collector-Base Breakdown Voltage V(BR)CBO
80
-
-
Collector-Emitter Breakdown Voltage V(BR)CEO
65
-
-
Emitter-Base Breakdown Voltage
V(BR)EBO
6
-
-
Collector Cut-Off Current
ICBO
-
-
15
Emitter Cut-Off Current
IEBO
-
-
5
DC Current Gain
hFE
110
-
-
VCE(sat)
-
Collector-Emitter Saturation Voltage
VCE(sat)
-
-
0.1
-
0.3
Base-Emitter Saturation Voltage
VBE(sat)
-
0.77
-
Transition Frequency
fT
100
-
-
Collector Output Capacitance
Cob
-
-
1.5
Unit Test Conditions
IC=10µA, IE=0
V IC=10mA , IB=0
IE=10µA , IC=0
nA VCB= 30V, IE=0
µA VEB=5V, IC=0
VCE=5V, IC=2mA
V IC=10mA, IB=0.5mA
V IC=100mA, IB=5mA
V
MHz
IC=10mA, IB=0.5mA
VCB=5V, IE=10mA,
f=100MHz
pF VCB=10V, IE=0, f=1MHz
http://www.SeCoSGmbH.com/
19-Sep-2011 Rev. A
Any changes of specification will not be informed individually.
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