BC817_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

Elektronische Bauelemente
BC817 -16, -25, -40
500 mA, 50 V
NPN Plastic Encapsulate Transistors
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
For general AF applications
High collector current
Collector
3
High current gain
Low collector-emitter saturation voltage
1
Complementary types: BC807 (PNP)
Base
K
2
Emitter
F
SOT-23
A
L
3
Top View
CB
1
1
2
E
D
G
H
3
2
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.04
2.10 2.80
1.20 1.60
0.89 1.40
1.78 2.04
0.30 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
-
0.18
0.40 0.60
0.08 0.20
0.6 REF.
0.85 1.15
ABSOLUTE MAXIMUM RATINGS at T_A = 25°C
PARAMETER
SYMBOL
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction & Storage Temperature
VCBO
VCEO
VEBO
IC
PC
TJ, TSTG
RATINGS
50
45
5
500
300
150, -55 ~ +150
UNIT
V
V
V
mA
mW
°C
CHARACTERISTICS at T_A = 25°C
PARAMETER
SYMBOL
Collector-base Breakdown Voltage
Collector-emitter Breakdown Voltage
Emitter-base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
DC Current Gain
Collector-emitter Saturation Voltage
Base-emitter Saturation Voltage
Base-emitter Voltage
Collector Capacitance
VCBO
VCEO
VEBO
ICBO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
VBE
Cob
Transition Frequency
fT
MIN.
50
45
5
-
-
100
40
-
-
-
-
100
TYP.
-
-
-
-
-
-
-
-
-
-
10
-
MAX.
-
-
-
0.1
0.1
600
-
0.7
1.2
1.2
-
-
UNIT TEST CONDITIONS
V IC = 10 µA, IE = 0
V IC = 10 mA, IB = 0
V IE = 1 µA, IC = 0
µA VCB = 45V, IE = 0
µA VEB = 4V, IC = 0
VCE = 1 V, IC = 100 mA
VCE = 1 V, IC = 500 mA
V IC = 500mA, IB = 50 mA
V IC = 500mA, IB = 50 mA
V VCE = 1V, IC = 500mA
pF
MHz
VCB = 10V, f=1MHz
VCE = 5 V, IC = 10 mA,
f = 100MHz
CLASSIFICATION OF h_FE(1)
Rank
Range
Marking
BC817-16
100 - 250
6A
BC817-25
160 - 400
6B
BC817-40
250 - 600
6C
16-Nov-2009 Rev. D
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