BC817W Datasheet, PDF (1/2 Pages) NXP Semiconductors – NPN general purpose transistor

Elektronische Bauelemente
RoHS Compliant Product
BC817W
NPN Transistor
Epitaxial Planar Transistor
Description
The BC817W is designed for switching and
AF amplifier application, suitable for driver
storages and low power output storages.
Features
* For General AF Appliacations
* High Collector Current
* High Current Gain
* Low Collector-Emitter Saturation Voltage
ABSOLUTE MAXIMUM RATINGS Ta=25^oC
Symbol
Parameter
V_CBO
Collector-Base Voltage
VCEO
VEBO
Collector-Emitter Voltage
Emitter-Base Voltage
IC
Collector Current
PD
Total Power Dissipation
TJ,Tstg
Junction and Storage Temperature
REF.
A
A1
A2
D
E
HE
Millimeter
Min. Max.
0.80 1.10
0
0.10
0.80 1.00
1.80 2.20
1.15 1.35
1.80 2.40
REF.
L1
L
b
c
e
Q1
Millimeter
Min. Max.
0.42 REF.
0.15
0.35
0.25
0.40
0.10
0.25
0.65 REF.
0.15 BSC.
Value
50
45
5
800
225
-55~+150
Units
V
V
V
mA
mW
C^O
ELECTRICAL CHARACTERISTICS Tamb=25^oC unless otherwise specifie
Parameter
Symbol Min Typ. Max Unit Test Conditions
Collector-Base Breakdown Voltage
BVCBO
50
-
Collector-Emitter Breakdown Voltage
BVCEO
45
-
-
V IC= 100 µA
-
V IC= 10mA
Collector-Emitter Breakdown Voltage
BVCEO
50
-
-
V IC= 100 µA
Emitter-Base Breakdown Voltage
BVEBO
5
-
-
V IE= 100 µA
Collector-Base Cutoff Current
ICES
-
-
100 nA VCE= 25V
Emitter-Base Cutoff Current
IEBO
-
-
100 nA VEB=4V
Collector Saturation Voltage
Base Saturation Voltage
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
*VCE(sat)
-
-
700 ^mV IC=500mA,IB=50mA
*VBE(sat)
-
-
1.2
V VCE= 1 V, IC=100mA
*hFE1
100
-
630
VCE= 1 V, IC=100mA
fT
-
100
-
MHz VCE= 5V, IC= 10mA,f=100MHz
Cob
-
-
12
pF VCB=10V, f=1MHz,IE=0A
Classification of hFE
Rank
Range
A
100~250
*Pulse width 380µs, Duty Cycle 2%
B
160~400
C
250~630
Marking
8FA,6A
8 FB,6B
8FC,6C
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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