BC817-16 Datasheet, PDF (1/2 Pages) Micro Commercial Components – NPN Small Signal Transistor 310mW

Elektronische Bauelemente
BC817-16
BC817-25 NPN Transistor
BC817-40
FEATURES
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
n _{Power dissipation}
P_CM: 300 mW (Tamb=25^oC)
n _{Collector current}
I_CM: 500 mA
n _{Collector-base voltage}
V_(BR)CBO: 30 V
n _{Operating and junction temperature range}
T_J, T_stg: -55^oC to +150^oC
n _{For general AF applications}
n _{High collector current}
n _{High current gain}
n _{Low collector-emitter saturation voltage}
3
1
2
A
L
3
Top View
1
2
1
BASE
BS
V
G
COLLECTOR
3
2
EMITTER
C
D
H
K
J
SOT-23
Dim Min Max
A 2.800 3.040
B 1.200 1.400
C 0.890 1.110
D 0.370 0.500
G 1.780 2.040
H 0.013 0.100
J 0.085 0.177
K 0.450 0.600
L 0.890 1.020
S 2.100 2.500
V 0.450 0.600
All Dimension in mm
ELECTRICAL CHARACTERISTICS (Tamb=25^oC unless otherwise specified)
Parameter
Symbol
Test conditions
MIN TYP MAX UNIT
Collector-base breakdown voltage
V(BR)CBO
Ic=100µA, IE=0
50
V
Collector-emitter breakdown voltage
V(BR)CEO
Ic=10mA, IB=0
45
V
Emitter-base breakdown voltage
V(BR)EBO
IE=1µA, IC=0
5
V
Collector cut-off current
ICBO
VCB=45V, IE=0
0.1 µA
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage & saturation
voltage
Transition frequency
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE &
VBE(sat)
fT
VEB=4V, IC=0
VCE=1V, IC=100mA
VCE=1V, IC=500mA
IC=500mA, IB=50mA
VCE=1V, IC=500mA
IC=500mA, IB=50mA
VCE=5V, IC=10mA, f=100MHz
100
40
100
0.1 µA
600
0.7 V
1.2 V
MHz
Collector output capacitance
Cob
VCB=10V, f=1MHz
10
pF
CLASSIFICATION OF h_FE(1)
Rank
Range
Marking
BC817-16
100-250
6A
BC817-25
160-400
6B
BC817-40
250-600
6C
http://www.SeCoSGmbH.com
01-Jun-2007 Rev. C
Any changing of specification will not be informed individual
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