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BC808_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors
Elektronische Bauelemente
BC808
-0.8A , -30V
PNP Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURE
Suitable for AF-Driver stages and low power output stages
Complementary to BC818
CLASSIFICATION OF hFE(1)
Product-Rank BC808-16 BC808-25
Range
100~250 160~400
Marking Code
5E
5F
BC808-40
250~630
5G
PACKAGE INFORMATION
Package
MPQ
SOT-23
3K
Leader Size
7 inch
SOT-23
A
L
3
Top View C B
1
1
2
K
E
3
2
D
F
G
H
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.80 3.04
2.10 2.55
1.20 1.40
0.89 1.15
1.78 2.04
0.30 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.09 0.18
0.45 0.60
0.08 0.177
0.6 REF.
0.89 1.02
Collector
3
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Ratings
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
VCBO
VCEO
VEBO
IC
PC
TJ, TSTG
-30
-25
-5
-800
300
150, -65 ~ 150
1
Base
2
Emitter
Unit
V
V
V
mA
mW
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Collector to Base Breakdown Voltage
V(BR)CBO
-30
-
-
V IC= -100µA, IE=0
Collector to Emitter Breakdown Voltage V(BR)CEO
-25
-
-
V IC= -10mA, IB=0
Emitter to Base Breakdown Voltage
V(BR)EBO
-5
-
-
V IE= -100µA, IC=0
Collector Cut-Off Current
ICBO
-
-
-0.1
µA VCB= -25V, IE=0
Emitter Cut-Off Current
IEBO
-
-
-0.1
µA VEB= -4V, IC=0
DC Current Gain
hFE (1)
100
-
630
hFE (2)
60
-
-
VCE= -1V, IC= -100mA
VCE= -1V, IC= -300mA
Collector to Emitter Saturation Voltage VCE(sat)
-
-
-0.7
V IC= -500mA, IB= -50mA
Base to Emitter Saturation Voltage
VBE
-
-
-1.2
V VCE= -1V, IC= -300mA
Transition Frequency
fT
-
100
-
MHz VCE= -5V, IC= -10mA, f=50MHZ
Collector output capacitance
Cob
-
12
-
pF VCB= -10V, IE=0, f=1MHZ
http://www.SeCoSGmbH.com/
15-Jul-2011 Rev. A
Any changes of specification will not be informed individually.
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