BC807W_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

Elektronische Bauelemente
BC807 -16W, -25W, -40W
-500 mA, -50 V
PNP Plastic Encapsulate Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
 Ideally suited for automatic insertion
 Epitaxial planar die construction
 Complementary to BC817W
PACKAGE INFORMATION
Weight: 0.0074 g (approximately)
MARKING
BC807-16W:
BC807-25W:
BC807-40W:
5A
5B
5C, YL
Collector


Base

Emitter
SOT-323
A
L
3
Top View
CB
1
1
2
K
E
3
2
D
F
G
H
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
1.80 2.20
1.80 2.45
1.15 1.35
0.80 1.10
1.20 1.40
0.20 0.40
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.100 REF.
0.525 REF.
0.08 0.25
-
-
0.650 TYP.
ABSOLUTE MAXIMUM RATINGS at Ta = 25°C
PARAMETER
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Collector Power Dissipation
Junction, Storage Temperature
SYMBOL
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J, T_STG
RATINGS
-50
-45
-5
-500
200
+150, -55 ~ +150
UNIT
V
V
V
mA
mW
℃
CHARACTERISTICS at Ta = 25°C
SYMBOL
BV_CBO
BV_CEO
BV_EBO
I_CBO
I_CEO
I_EBO
V_CE(sat)
V_BE(on)
h_FE(1)
h_FE(2)
fT
807-16W
807-25W
807-40W
C_OB
MIN.
-50
-45
-5
-
-
-
-
-
100
160
250
40
80
-
MAX.
-
-
-
-0.1
-0.2
-0.1
-0.7
-1.2
250
400
600
-
-
10
UNIT
V
V
V
uA
uA
uA
V
V
MHz
pF
TEST CONDITIONS
I_C = -10 uA, I_E = 0
I_C = -10 mA, I_B = 0
I_E = -1 uA, I_C = 0
V_CB = -20V, I_E = 0
V_CE = -20V, I_B = 0
V_EB = -5V, I_C = 0
I_C = -500mA, I_B = -50 mA
V_CE = -1 V, I_C = -500 mA
V_CE = -1 V, I_C = -100 mA
V_CE = -1 V, I_C = -500 mA
V_CE = -5 V, I_C = -10 mA, f = 100MHz
V_CB = -10V, f=1MHz
28-Jul-2010 Rev. F
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