BC807-16W Datasheet, PDF (1/3 Pages) Siemens Semiconductor Group – PNP Silicon AF Transistor (For general AF applications High collector current High current gain)

Elektronische Bauelemente
FEATURES
z Ideally suited for automatic insertion
z Epitaxial planar die construction
z Complementary to BC817W
MARKING
16W:5A; 25W:5B; 40W:5C
PACKAGE DIMENSIONS
BC807-16W, -25W, -40W
-500 mA, -50 V
PNP Plastic Encapsulate Transistor
ABSOLUTE MAXIMUM RATINGS at Ta = 25°C
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Currrent
Collector Power Dissipation
Junction, Storage Temperature
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J, T_STG
CHARACTERISTICS at Ta = 25°C
Symbol
BV_CBO
BV_CEO
BV_EBO
I_CBO
I_CEO
I_EBO
V_CE(sat)
V_BE(on)
h_FE(1)
807-16W
807-25W
807-40W
h_FE(2)
fT
C_OB
Min.
-50
-45
-5
-
-
-
-
-
100
160
250
40
80
-
Max.
-
-
-
-0.1
-0.2
-0.1
-0.7
-1.2
250
400
600
-
-
10
Unit
V
V
V
uA
uA
uA
V
V
MHz
pF
REF.
A
A1
A2
D
E
HE
Millimeter
Min.
Max.
0.80
1.10
0
0.10
0.80
1.00
1.80
2.20
1.15
1.35
1.80
2.40
REF.
L1
L
b
c
e
Q1
Millimeter
Min.
Max.
0.42 REF.
0.15
0.35
0.25
0.40
0.10
0.25
0.65 REF.
0.15 BSC.
Ratings
-50
-45
-5
500
200
+150, -55 ~ +150
Unit
V
V
V
mA
mW
℃
Test Conditions
I_C = -10 uA, I_E = 0
I_C = -10 mA, I_B = 0
I_E = -1 uA, I_C = 0
V_CB = -20V, I_E = 0
V_CE = -20V, I_B = 0
V_EB = -5V, I_C = 0
I_C = -500mA, I_B = -50 mA
V_CE = -1 V, I_C = -500 mA
V_CE = -1 V, I_C = -100 mA
V_CE = -1 V, I_C = -500 mA
V_CE = -5 V, I_C = -10 mA, f = 100MHz
V_CB = -10V, f=1MHz
01-June-2002 Rev. A
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