BC636_15 Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – Plastic Encapsulate Transistors

Elektronische Bauelemente
BC636/638/640
PNP Type
Plastic Encapsulate Transistors
FEATURE
Power Dissipation:
PCM: 0.83 mW (Tamb=25^oC)
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
TO-92
4.55±0.2
3.5±0.2
MAXIMUM RATINGS (TA=25 ^oC unless otherwise specified)
0.4 6^{+–00..11}
0.43^{+–00..0078}
(1.27 Typ).
123
1.25^{+–00..22}
2.54±0.1
1: Emitter
2: Collector
3: Base
PARAMETERS
SYMBOLS
Collector - Emitter Voltage
BC636
V_CEO
BC638
Collector - Base Voltage
BC640
BC636
V_CBO
BC638
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
BC640
V_EBO
I_C
I_CP
I_B
Junction, Storage Temperature
T_J,TSTG
Thermal Resistance from Junction to Ambient
R_θJA*
ELECTRICAL CHARACTERISTICS (TA=25 ^oC unless otherwise specified)
VALUES
UNIT
-45
V
-60
V
-80
V
-45
V
-60
V
-100
V
-5
V
-1
A
-1.5
A
100
mA
150, -65 ~ 150
o_C
150
K/w
PARAMETERS
Collector - emitter breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector - emitter saturation voltage
Base - emitter voltage
Transition frequency
CLASSIFICATION OF hFE(2)
SYMBOL TEST CONDITIONS
MIN
IC=10mA, IB=0
BC636 -45
V_(BR)CEO
BC638 -60
BC640 -80
I _CBO
VCB=-30V, IE=0
I _EBO
VEB=-5V, IB=0
h_FE(1) VCE=-2V, IC=-5mA
40
h_FE(2) VCE=-2V, IC=-150mA BC636-10 63
BC636-16, BC638-16, BC640-16 100
h_{FE(3) VCE=-2V, IC=-500mA}
25
V_CE(sat) IC=-500mA, IB=-50mA
V_BE(ON) VCE=-2V, IC=-500mA
f_T
VCE=-5V, IC=-50mA, f=100MHz 100
TYP MAX UNIT
V
V
V
-0.1 µA
-0.1 µA
160
250
-0.5
V
-1
V
MHz
RANK
RANGE
BC636-10
63-160
BC636-16, BC638-16, BC640-16
100-250
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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