BC635_15 Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – General Purpose Transistor

Elektronische Bauelemente
BC635 / BC637 / BC639
NPN
General Purpose Transistor
FEATURES
 Low frequency amplifier
 High current transistors
CLASSIFICATION OF h_FE
Product-Rank
BC635
Range
40~250
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead free
G
BC637-16
BC639-16
63~250
63~250
K
E
TO-92
H
J
A
D
B
CF
Emitter
Collector
Base
REF.
A
B
C
D
E
F
G
H
J
K
Millimeter
Min. Max.
4.40 4.70
4.30 4.70
12.70
-
3.30 3.81
0.36 0.56
0.36 0.51
1.27 TYP.
1.10
-
2.42 2.66
0.36 0.76
ABSOLUTE MAXIMUM RATINGS (T_A = 25°C unless otherwise specified)
Parameter
BC635
Collector to Base Voltage
BC637
BC639
BC635
Collector to Emitter Voltage BC637
BC639
Emitter to Base Voltage
Continuous Collector Current
Collector Power Dissipation
Junction, Storage Temperature
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J, T_STG
Rating
45
60
100
45
60
80
5
1
830
150, -65~150
Unit
V
V
V
A
mW
°C
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise specified)
Parameter
Collector to Emitter
Breakdown Voltage
BC635
BC637
BC639
Collector Cut - Off Current
Emitter cut-off current
DC Current Gain
BC635
DC Current Gain
BC637-16
BC639-16
Collector to Emitter Saturation
Voltage
Base-emitter voltage
Transition frequency
Symbol
V_(BR)CEO
I_CBO
I_CEO
h_FE
V_CE(sat)
V_BE
f_T
Min.
45
60
80
-
-
25
25
40
63
63
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
100
Max.
-
-
-
0.1
0.1
-
-
250
250
250
0.5
1
-
Unit
V
μA
μA
V
V
MHz
Test Conditions
I_C=10mA, I_B=0
V_CB=30V, I_E=0
V_EB=5V, I_B=0
V_CE=2V, I_C=5mA
V_CE=2V, I_C=500mA
V_CE=2V, I_C=150mA
I_C=500mA, I_B=50mA
V_CE=2V, I_C=500mA
V_CE=5V, I_C=10mA, f=50MHz
http://www.SeCoSGmbH.com/
25-Dec-2014 Rev. B
Any changes of specification will not be informed individually.
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