BC635 Datasheet, PDF (1/2 Pages) Motorola, Inc – High Current Transistors

Elektronische Bauelemente
BC635 / BC637 / BC639
NPN Type
Plastic Encapsulated Transistor
FEATURE
High current transistor
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
TO-92
4.55±0.2
3.5±0.2
0.4 6^{+–00..11}
0.43^{+–00..0078}
(1.27 Typ).
123
1.25^{+–00..22}
2.54±0.1
1: Emitter
2: Collector
3: Base
MAXIMUM RATINGS (TA=25 ^oC unless otherwise specified)
PARAMETERS
SYMBOLS
Collector - Emitter Voltage
Collector - Base Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
BC635
BC637
BC639
BC635
BC637
BC639
V_CEO
V_CBO
V_EBO
I_C
P_C
T_J,TSTG
ELECTRICAL CHARACTERIS^oTICS (TA=25 ^oC unless otherwise specified)
VALUES
45
60
80
45
60
100
5
1
0.625
150, -65 ~ 150
UNIT
V
V
V
V
V
V
V
A
W
o_C
PARAMETERS
Collector - emitter breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector - emitter saturation voltage
Base - emitter voltage
Transition frequency
CLASSIFICATION OF hFE(2)
SYMBOL TEST CONDITIONS
MIN
IC=10mA, IB=0
BC635 45
V_(BR)CEO
BC637 60
I _CBO
VCB=30V, IE=0
BC639 80
I _EBO
VEB=5V, IB=0
h_FE(1) VCE=2V, IC=5mA
25
h_FE(2) VCE=2V, IC=150mA BC635 40
BC637-10/BC639-10 63
BC637-16/BC639-16 100
h_{FE(3) VCE=2V, IC=500mA}
25
V_CE(sat) IC=500mA, IB=50mA
V_BE
VCE=2V, IC=500mA
f_T
VCE=5V, IC=10mA, f=50MHz
TYP MAX UNIT
V
V
V
0.1
µA
0.1
µA
250
160
250
0.5
V
1
V
100
MHz
RANK
RANGE
BC635
40-250
BC637-10, BC639-10
63-160
BC637-16, BC639-16
100-250
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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