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| BC556_15 Datasheet, PDF (1/3 Pages) SeCoS Halbleitertechnologie GmbH – Elektronische Bauelemente | |||
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Elektronische Bauelemente
BC556, B, C
BC557, A, B, C
BC558, A, B, C
FEATURES PNP Transistor
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
TO-92
Power dissipation
PCM:
0.625 W (Tamb=25â)
Collector current
ICM:
- 0.1 A
Collector-base voltage
1
2
VCBO:
BC556 -80 V
3
BC557 -50 V
BC558 -30 V
Operating and storage junction temperature range
TJ, Tstg: -55â to +150â
1 23
1. COLLECTOR
2. BASE
3. EMITTER
ELECTRICAL CHARACTERISTICS (Tamb=25â unless otherwise specified)
Parameter
Symbol Test conditions
MIN
Collector-base breakdown voltage
Collector-emitter breakdown voltage
BC556
-80
BC557
VCBO
Ic= -100µA , IE=0
-50
BC558
-30
BC556
-65
BC557
VCEO = - 2mA, IB=0
-45
BC558
-30
Emitter-base breakdown voltage
VEBO
IE= -100µA, IC=0
-6
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
BC556
BC557
BC558
BC556
BC557
BC558
BC556
BC557
BC558
BC556
BC557
BC558
BC557A/558A
BC556B/BC557B/BC558B
BC556C/BC557C/BC558C
Collector-emitter saturation voltage
ICBO
ICEO
IEBO
hFE(1)
VCE(sat)
VCB= -70V, IE=0
VCB= -45 V, IE=0
VCB= -25V, IE=0
VCE= -60 V, IB=0
VCE= -40 V, IB=0
VCE= -25 V, IB=0
VEB= -5V, IC=0
120
120
VCE=-5V, IC= -2mA
120
120
180
420
I C=-100 mA, IB= -5mA
MAX UNIT
V
V
V
-0.1
µA
-0.1
µA
-0.1 µA
500
800
800
220
460
800
-0.3
V
Base-emitter saturation voltage
VBE(sat)
I C= -100 mA, IB=-5mA
-1
V
Transition frequency
VCE= -5V, IC= -10mA
fT
150
f = 100MHz
MHz
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 1 of 3
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