BC337 Datasheet, PDF (1/3 Pages) Motorola, Inc – Amplifier Transistor

Elektronische Bauelemente
BC337/BC338
NPN Plastic-Encapsulate Transistors
FEATURES
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
Power dissipation
P_{CM : 0.625 WčTamb=25¥Ď}
Collector current
I_{CM : 0.8 A}
1
Collector-base voltage
2
3
V_{(BR)CBO : BC337 50 V}
BC338 30
TO-92
1 23
Operating and storage junction temperature range
TJđTstg: -55¥ to +150¥
1. COLLECTOR
2. BASE
3 . EMITTER
.
ELECTRICAL CHARACTERISTICS (Tamb=25Я unless otherwise specified)
Parameter
Symbol
Test conditions
MIN TYP
Collector-base breakdown voltage
BC337
BC338
Collector-emitter breakdown voltage
BC337
BC338
VCBO
VCEO
Ic= -100µA , IE=0
50
30
IC= -10 mA , IB=0
45
25
Emitter-base breakdown voltage
VEBO
IE= -10µA, IC=0
5
Collector cut-off current
ICBO
BC337
BC338
Collector cut-off current
BC337
ICEO
BC338
VCB= -45V, IE=0
VCB= -25V, IE=0
VCE= -40V, IB=0
VCE= -20 V, IB=0
Emitter cut-off current
IEBO
VEB= -4 V, IC=0
DC current gain
Collector-emitter saturation voltage
hFE(1)
hFE(2)
VCE(sat)
VCE=-1V, IC= -100mA
100
VCE=-1V, IC= -300mA
60
IC=-500 mA, IB= -50 mA
Base-emitter saturation voltage
VBE(sat)
IC= -500 mA, IB=-50 mA
MAX
0.1
0.1
0.2
0.2
0.1
630
0.7
1.2
UNIT
V
V
V
V
V
µA
µA
µA
µA
µA
V
V
Base-emitter voltage
Transition frequency
Collector Output Capacitance
h_FE CLASSIFICATION
Classification
h_FE1
http://www.SeCoSGmbH.com
28-Jun-2007 Rev. A
V_BE
fT
Cob
16
100-250
V_CE=1V, I_C= 300mA
1.2
V
VCE= -5V, IC= -10mA
210
f = 100MHz
V_CB=10V,I_E=0
f=1MHZ
15
MHz
pF
25
40
160-400
250-630
Any changing of specification will not be informed individual
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