BAW56W Datasheet, PDF (1/2 Pages) NXP Semiconductors – High-speed double diode

Elektronische Bauelemente
BAW56W
Small Signal Switching Diode
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
z Fast Switching Speed
z For General Purpose Switching Applications
z High Conductance
MARKING: KJC
3
1
2
ABSOLUTE MAXIMUM RATINGS (Single diode @ T_A = 25°C)
Parameter
Symbol
Non-Repetitive Peak Reverse Voltage
Peak Repetitive Peak Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current
Average Rectified Output Current
Peak Forward Surge Current
Power Dissipation
Thermal Resistance Junction to Ambient
Junction, Storage Temperature
@=1.0μs
@=1.0s
V_RM
V_RRM
V_RWM
V_R
V_R(RMS)
I_FM
I_O
I_FSM
P_D
R_θJA
T_J, T_STG
SOT-323
A
L
3
Top View
CB
1
1
2
K
E
3
2
D
F
G
H
J
REF.
A
B
C
D
E
Millimeter
Min. Max.
2.00 2.20
2.15 2.45
1.15 1.35
0.90 1.10
1.20 1.40
REF.
F
G
H
J
Millimeter
Min. Max.
0.20 0.40
-
-
0.525 REF.
0.08 0.15
Ratings
100
75
53
300
150
2.0
1.0
200
625
150, -65 ~ +150
Unit
V
V
V
mA
mA
A
mW
°C/W
°C
ELECTRICAL CHARACTERISTICS (at Ta = 25°C unless otherwise specified)
Parameters
Symbol Min. Max.
Unit
Reverse Breakdown Voltage
V_(BR)R
75
-
V
Reverse Voltage Leakage Current
I_R
-
2.5
25
μA
nA
V_F1
V_F2
Forward Voltage
V_F3
V_F4
Diode Capacitance (between Terminals)
C_T
Reverse Recovery Time
t_RR
-
715
-
855
mV
-
1000
-
1250
-
2
pF
-
4
nS
Test Conditions
I_R = 2.5 μA
V_R = 75 V
V_R = 20 V
I_F = 1 mA
I_F = 10 mA
I_F = 50 mA
I_F = 150 mA
V_R = 0, f = 1MHz
I_F = I_R = 10 mA, I_RR = 0.1xI_R, R_L=100Ω
01-Nov-2008 Rev. C
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