BAV99W_15 Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – Surface Mount Switching Diode

Elektronische Bauelemente
BAV99W
Dual Series Chips
Surface Mount Switching Diode
RoHS Compliant Product
FEATURES
Fast Switching Speed
A suffix of "-C" specifies halogen & lead-free
A
L
Surface Mount Package Ideally Suited for
Automatic Insertion
For General Purpose Switching Applications
3
Top View
1
2
BS
High Conductance
V
G
C ATHODE
3
ANODE
ANODE
1
2
C ATHODE
SC-70
SOT-323
C
D
H
K
J
MAXIMUM RATINGS (EACH DIODE)
Rating
Reverse Voltage
Forward Current
Peak Forward Surge Current
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board(1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
BAV99W = A7, KJG
Symbol
VR
IF
IFM(surge)
Value
70
215
500
Symbol
PD
R_qJA
PD
R_qJA
TJ, Tstg
Max
200
1.6
625
300
2.4
417
– 65 to +150
Unit
Vdc
mAdc
mAdc
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
SOT-323(SC-70)
Dim Min Max
A 1.800 2.200
B 1.150 1.350
C 0.800 1.000
D 0.300 0.400
G 1.200 1.400
H 0.000 0.100
J 0.100 0.250
K 0.350 0.500
L 0.590 0.720
S 2.000 2.400
V 0.280 0.420
All Dimension in mm
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(I(BR) = 100 µAdc)
V(BR)
70
Reverse Voltage Leakage Current
(VR = 25 Vdc, TJ = 150°C)
(VR = 70 Vdc)
(VR = 70 Vdc, TJ = 150°C)
Diode Capacitance
(VR = 0, f = 1.0 MHz)
IR
—
—
—
CD
—
Forward Voltage
(IF = 1.0 mAdc)
(IF = 10 mAdc)
(IF = 50 mAdc)
(IF = 150 mAdc)
VF
—
—
—
—
Reverse Recovery Time
(IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc) (Figure 1) RL = 100 Ω
trr
—
1. FR– 5 = 1.0 X 0.75 X 0.062 in. 2.Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina.
Max
—
30
2.5
50
1.5
715
855
1000
1250
6.0
Unit
Vdc
µAdc
pF
mVdc
ns
http://www.SeCoSGmbH.com
01-Jun-2004 Rev. B
Any changing of specification will not be informed individual
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