BAS70W_15 Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – Surface Mount Schottky Barrier Diodes

Elektronische Bauelemente
BAS70W/BAS70-04W/
BAS70-05W/BAS70-06W
VOLTAGE 70 V, 70 mA
Surface Mount Schottky Barrier Diodes
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
 Low Turn-on voltage
 Low Forward Voltage - 0.75V(Max) @ I_F = 10 mA
 Very Low Capacitance - Less Than 2.0pF @ 0V
For high speed switching application, circuit protection
MECHANICAL DATA
 Case: SOT-323, Molded Plastic
 Terminals: Solderable per MIL-STD-202,Method 208
 Polarity: See Diagrams Below
 Weight: 0.004 grams (approx.)
 Mounting Position: Any
SOT-323
A
L
3
Top View
CB
1
1
2
K
E
3
2
D
F
G
H
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.00
2.15
1.15
2.20
2.45
1.35
0.90 1.10
1.20 1.40
0.20 0.40
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.100 REF.
0.525 REF.
0.08 0.15
-
-
0.525 TYP.
BAS70W Marking: K73, BE
BAS70-04W Marking: K74
BAS70-05W Marking: K75
BAS70-06W Marking: K76
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_J = 150°C unless otherwise noted)
TYPE NUMBER
Reverse Voltage
Forward Power Dissipation
@ T_A = 25°C
Derate above 25°C
Forward Continuous Current
Single Forward Current
t ≦ 10 m
Operating Junction and Storage Temperature Range
SYMBOL
V_R
P_F
I_FM
I_FSM
T_J, T_STG
VALUES
70
225
1.8
70
100
-55~150
UNITS
V
mW
mW / °C
mA
℃
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted)
PARAMETERS
Reverse breakdown voltage
Diode capacitance
Reverse voltage leakage current
Forward voltage
SYMBOL
V_(BR)R
C_T
I_R
V_F
TEST CONDITIONS
I_R= 10µA
V_R=0, f=1MHz
V_R=50V
V_R=70V
I_F=1.0 mA
I_F=10 mA
I_F=15 mA
MIN
70
-
-
-
MAX
-
2.0
0.1
10
410
750
1000
UNITS
V
pF
A
mV
http://www.SeCoSGmbH.com/
23-June-2010 Rev. C
Any changes of specification will not be informed individually.
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