BAS70 Datasheet, PDF (1/2 Pages) NXP Semiconductors – Schottky barrier double diodes

Elektronische Bauelemente
BAS70/-04/-05/-06
Surface Mount Schottky Barrier Diodes
FEATURES
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
· Low Turn-on Voltage
· Low Forward Voltage - 0.75V(Max) @ IF = 10 mA
· Very Low Capacitance - Less Than 2.0pF @ 0V
For high speed switching application, circuit protection
A
L
Top View
BS
MECHANICAL DATA
· _{Case: SOT-23, Molded Plastic}
· _{Terminals: Solderable per MIL-STD-202,}
Method 208
· _{Polarity: See Diagrams Below}
· _{Weight: 0.008 grams (approx.)}
· _{Mounting Position: Any}
V
G
D
C
H
K
3
1
2
SOT-23
Dim Min Max
A 2.800 3.040
B 1.200 1.400
C 0.890 1.110
D 0.370 0.500
G 1.780 2.040
H 0.013 0.100
J 0.085 0.177
K 0.450 0.600
J
L 0.890 1.020
S 2.100 2.500
V 0.450 0.600
All Dimension in mm
3
3
3
3
1
2
BAS70 Marking: K73, BE, 73
1
2
BAS70-04 Marking: K74, 74
1
2
BAS70-05 Marking: K75, 75
1
2
BAS70-06 Marking: K76, 76
MAXIMUM RATINGS (T _J = 150^OC unless otherwise noted)
Rating
Reverse Voltage
Forward Power Dissipation
@ TA = 25 C
Derate above 25 C
Operating Junction and Storage Temperature Range
Forward Continuous Current
Single Forward Current
t v 10 m
Symbol
VR
PF
TJ, Tstg
I_FM
IFSM
Value
70
225
1.8
± 55 to +150
70
100
Unit
Volts
mW
mW /5^OC
5^OC
mA
mA
ELECTRICALCHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Reverse Breakdown Voltage (IR = 10 µA)
Total Capacitance (VR = 0 V, f = 1.0 MHz)
Reverse Leakage (VR = 50 V)
(VR = 70 V)
Forward Voltage (IF = 1.0 mAdc)
Forward Voltage (IF = 10 mAdc)
Forward Voltage (IF = 15 mAdc)
Symbol
Min
V(BR)R
70
CT
—
IR
—
—
VF
—
VF
—
VF
—
Max
Unit
—
Volts
2.0
pF
0.1
µAdc
10
410
mVdc
750
mVdc
1.0
Vdc
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individua
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